著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
,Fabrication of Semi-Insulating GaN Wafers by Hydride Vapor Phase Epitaxy of Fe-Doped Thick GaN Layers Using GaAs Starting Substrates,Japanese Journal of Applied Physics Vol.44 No.50,,,2005,,,,https://cir.nii.ac.jp/crid/1010282256927408387,