著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
,High On/Off Ratio in Enhancement-Mode AlxGal-xN/GaN Junction Heterostructure Field-Effect Transistors with P-type GaN Gate Contact,Japanese Journal of Applied Physics Vol.45,,,2006,,,,https://cir.nii.ac.jp/crid/1010282256965870852,