著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
,Enhancement of memory retention time of metal/ferroelectric/insulator/semiconductor structure by using fast annealing and nitrogen radicalirradiation,Journal of the Korean Physical Society 55,,,2009,,,884-887,https://cir.nii.ac.jp/crid/1010282257047745819,