Fundamental oscillation up to 1.08THz in resonant tunneling diodes with high-indium-composition transit layers for reduction of transit delay

DOI Web Site 被引用文献3件 参考文献9件
  • Teranishi Atsushi
    Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
  • Shizuno Kaoru
    Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
  • Suzuki Safumi
    Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
  • Asada Masahiro
    Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
  • Sugiyama Hiroki
    NTT Photonics Laboratories, NTT Corporation
  • Yokoyama Haruki
    NTT Photonics Laboratories, NTT Corporation

抄録

Fundamental oscillations up to 1.08THz with the output power of 5.5 microwatts was achieved in GaInAs/AlAs resonant tunneling diodes (RTDs) at room temperature. The graded emitter, thin barriers, and high-indium-composition transit layers were introduced to reduce the tunneling and transit delays. The first two of these structures are the same as those in RTDs oscillating at 1.04THz reported recently, and the last structure provided for further reduction of the transit time and increase in frequency due to suppression of the Γ-L transition and increment of the launching velocity.

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