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Fundamental Oscillation up to 1. 08THz in Resonant Tunneling Diodes with High-Indium Composition Transit Layers for Reduction of Transit Delay

Bibliographic Information

Title
Fundamental Oscillation up to 1. 08THz in Resonant Tunneling Diodes with High-Indium Composition Transit Layers for Reduction of Transit Delay
Author
A. Teranishi, K. Shizuno, S. Suzuki, M. Asada, H. Sugiyama, and H. Yokoyama

Journal

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Details

  • CRID
    1010282257111480449
  • Article Type
    journal article
  • Data Source
    • KAKEN

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