In-situ annealing and fast rate silicon epitaxy on porous silicon by mesoplasma chemical vapor deposition
Bibliographic Information
- Title
- In-situ annealing and fast rate silicon epitaxy on porous silicon by mesoplasma chemical vapor deposition
- Author
- S. Zhang, Z. Lu, J. Sheng, P. Gao, X. Yang, S. Wu, J. Ye, M. Kambara
Journal
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- Appl. Phys. Express
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Appl. Phys. Express 印刷中 2016
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Details
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- CRID
- 1010282257286665344
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- Article Type
- journal article
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- Data Source
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- KAKEN