著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
,Room-Temperature Epitaxial Growth of High Quality AIN on SiC by Pulsed Sputtering Deposition,Appl. Phys. Exp 2,,,2009,,,11003,https://cir.nii.ac.jp/crid/1010282257417758491,