Impact of InGaAs surface nitridation on interface properties of InGaAs metal-oxide-semiconductor capacitors using electron cyclotron resonance plasma sputtering SiO2
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- 星井 拓也
- 東京大学
書誌事項
- タイトル
- Impact of InGaAs surface nitridation on interface properties of InGaAs metal-oxide-semiconductor capacitors using electron cyclotron resonance plasma sputtering SiO2
- 著者
- Takuya Hoshii
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 97 132102-, 2010