Improvement of Read Disturb, Program Disturb and Data Retention by Memory Cell Vth Optimization of Ferroelectric (Fe)-NAND Flash Memories for Highly Reliable and Low Power Enterprise Solid-State Drives (SSDs)

Bibliographic Information

Title
Improvement of Read Disturb, Program Disturb and Data Retention by Memory Cell Vth Optimization of Ferroelectric (Fe)-NAND Flash Memories for Highly Reliable and Low Power Enterprise Solid-State Drives (SSDs)
Author
T.Hatanaka, M.Takahashi, S.Sakai, K.Takeuchi

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Details

  • CRID
    1010282257465116934
  • Article Type
    journal article
  • Data Source
    • KAKEN

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