Improvement of Read Disturb, Program Disturb and Data Retention by Memory Cell Vth Optimization of Ferroelectric (Fe)-NAND Flash Memories for Highly Reliable and Low Power Enterprise Solid-State Drives (SSDs)

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タイトル
Improvement of Read Disturb, Program Disturb and Data Retention by Memory Cell Vth Optimization of Ferroelectric (Fe)-NAND Flash Memories for Highly Reliable and Low Power Enterprise Solid-State Drives (SSDs)
著者
T.Hatanaka, M.Takahashi, S.Sakai, K.Takeuchi

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詳細情報

  • CRID
    1010282257465116934
  • 資料種別
    journal article
  • データソース種別
    • KAKEN

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