Improvement of Read Disturb, Program Disturb and Data Retention by Memory Cell Vth Optimization of Ferroelectric (Fe)-NAND Flash Memories for Highly Reliable and Low Power Enterprise Solid-State Drives (SSDs)
書誌事項
- タイトル
- Improvement of Read Disturb, Program Disturb and Data Retention by Memory Cell Vth Optimization of Ferroelectric (Fe)-NAND Flash Memories for Highly Reliable and Low Power Enterprise Solid-State Drives (SSDs)
- 著者
- T.Hatanaka, M.Takahashi, S.Sakai, K.Takeuchi
収録刊行物
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- IEICE Transactions on Electronics
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IEICE Transactions on Electronics E49-C, No.4 539-547, 2011
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詳細情報
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- CRID
- 1010282257465116934
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- 資料種別
- journal article
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- データソース種別
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- KAKEN