著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
,"Improvement of Read Disturb, Program Disturb and Data Retention by Memory Cell Vth Optimization of Ferroelectric (Fe)-NAND Flash Memories for Highly Reliable and Low Power Enterprise Solid-State Drives (SSDs)",IEICE Transactions on Electronics,,,2011,"E49-C, No.4",,539-547,https://cir.nii.ac.jp/crid/1010282257465116934,