Hyperfine Structure of Hydrogen Atoms in Hydrogenated Amorphous Silicon
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Abstract
We have observed an ESR spectrum due to atomic hydrogen being composed of a doublet with a splitting of 119 G in a-Si:H samples containing a large amount of hydrogen. Atomic hydrogen is suggested to be located at a tetrahedral-interstitial site either in the bulk region or in the interface between a sample and a substrate.
Journal
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- 広島工業大学研究紀要
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広島工業大学研究紀要 34 31-33, 2000-02
広島工業大学