In‐plane photocurrent spectroscopy in GaAs-AlAs superlattices

DOI IR IR (HANDLE)

Bibliographic Information

Other Title
  • In-plane photocurrent spectroscopy in GaAs-AlAs superlattices
Published
1995-03-20
Resource Type
journal article
Rights Information
  • Copyright © 1995 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
DOI
  • 10.1063/1.113637
Publisher
American Institute of Physics

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Description

The in‐plane photoconductivity of GaAs‐AlAs superlattices on GaAs substrates is experimentally studied as a function of the incident photon energy at different temperatures and light intensities. Superlattice and substrate are electrically isolated by a thick  Al0.3Ga0.7As barrier but connected through penetrating contacts. Depending on the transport properties of the two subsystems pseudo‐negative photoconductivity can be observed, i.e., at the absorption maximum of the superlattice the photocurrent exhibits a minimum.

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