{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1050001338910681600.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"HDL","@value":"http://hdl.handle.net/10228/2323"}},{"identifier":{"@type":"URI","@value":"https://kyutech.repo.nii.ac.jp/records/1497"}},{"identifier":{"@type":"HDL","@value":"http://hdl.handle.net/10228/580"}},{"identifier":{"@type":"URI","@value":"https://kyutech.repo.nii.ac.jp/records/334"}},{"identifier":{"@type":"DOI","@value":"10.1063/1.1600518"}},{"identifier":{"@type":"URI","@value":"https://pubs.aip.org/aip/apl/article-pdf/83/6/1243/18580845/1243_1_online.pdf"}},{"identifier":{"@type":"NAID","@value":"120002441364"}},{"identifier":{"@type":"NAID","@value":"120002440760"}}],"resourceType":"学術雑誌論文(journal article)","dc:title":[{"@language":"en","@value":"Organic field-effect transistors by a wet-transferring method"}],"dc:language":"en","description":[{"type":"Abstract","notation":[{"@language":"en","@value":"Organic field-effect transistors (OFETs) were prepared from an epitaxially grown film fabricated by a wet-transferring process. 2,3,7,8,12,13,17,18-octaethyl-21H,23H-porphyrin platinum(II) was grown by thermal evaporation on the (001) surface of potassium bromide (KBr) single crystals. When the film was grown at room temperature, the planar molecules were aligned orthogonally on the crystal surfaces along the [110] direction with edge-on orientation to the surface normal direction. The epitaxy film was transferred to on SiO2/Si surface immediately after removing the KBr on the water surface to product the OFETs. The calculated mu(FET) of the OFET for the wet-transferred vertically aligned film were 1.3x10(-4) and 2.2x10(-4) cm(2) V-1 s(-1) at the linear and saturation regions, respectively, at V-g=-50 V at an I-ON/I-OFF (on/off ratios of source-drain current) of 10(4)similar to10(5). (C) 2003 American Institute of Physics."}]}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1070001338910681603","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000023769949"}],"foaf:name":[{"@language":"en","@value":"Noh, YongYoung"}]},{"@id":"https://cir.nii.ac.jp/crid/1070001338910681601","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000023769961"}],"foaf:name":[{"@language":"en","@value":"Kim, 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Shuichi"},{"@language":"ja","@value":"永松, 秀一"},{"@language":"ja-Kana","@value":"ナガマツ, シュウイチ"}]}],"publication":{"publicationIdentifier":[{"@type":"EISSN","@value":"10773118"},{"@type":"PISSN","@value":"00036951"},{"@type":"NCID","@value":"AA00543431"}],"prism:publicationName":[{"@language":"en","@value":"Applied Physics Letters"}],"dc:publisher":[{"@value":"American Institute of Physics"}],"prism:publicationDate":"2003-08-11","prism:volume":"83","prism:number":"6","prism:startingPage":"1243","prism:endingPage":"1245"},"reviewed":"false","dc:rights":["Copyright (c) 2007 American Institute of Physics.This article may be downloaded for personal use only.Any other use requires prior permission of the author and the American Institute of Physics."],"url":[{"@id":"https://kyutech.repo.nii.ac.jp/records/1497"},{"@id":"https://kyutech.repo.nii.ac.jp/records/334"},{"@id":"https://pubs.aip.org/aip/apl/article-pdf/83/6/1243/18580845/1243_1_online.pdf"},{"@id":"http://hdl.handle.net/10228/580"},{"@id":"http://hdl.handle.net/10228/2323"}],"foaf:topic":[{"@id":"https://cir.nii.ac.jp/all?q=organic%20semiconductors","dc:title":"organic semiconductors"},{"@id":"https://cir.nii.ac.jp/all?q=field%20effect%20transistors","dc:title":"field effect transistors"},{"@id":"https://cir.nii.ac.jp/all?q=semiconductor%20epitaxial%20layers","dc:title":"semiconductor epitaxial layers"}],"dcterms:subject":[{"subjectScheme":"NDC","notation":[{"@value":"427"}]},{"subjectScheme":"Other","notation":[{"@value":"organic semiconductors"}]},{"subjectScheme":"Other","notation":[{"@value":"field effect transistors"}]},{"subjectScheme":"Other","notation":[{"@value":"semiconductor epitaxial layers"}]}],"relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1050282813365218688","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"On the electrical characterization of platinum octaethylporphyrin(PtOEP)/Si hybrid device"}]},{"@id":"https://cir.nii.ac.jp/crid/1390282679582753536","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Formation of a MgAu alloy Cathode by Photolithography and the Application for Organic Light-Emitting Diodes and Organic Field-effect Transistors"},{"@language":"ja","@value":"フォトリソグラフィー法によるＭｇＡｕ合金電極の形成と有機ＬＥＤ・有機ＦＥＴへの適用"},{"@language":"ja-Kana","@value":"フォトリソグラフィーホウ ニ ヨル MgAu ゴウキン デンキョク ノ ケイセイ ト ユウキ LED ユウキ FET エ ノ テキヨウ"},{"@value":"Formation of MgAu alloy cathode by photolithography and its application to organic light-emitting diodes and organic field effect 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