著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
"Miura, Hideo and Suzuki, Ken and Ito, Yuta and Samukawa, Seiji and Kubota, Tomonori and Ikoma, Toru and Yoshikawa, Hideki and Ueda, Shigenori and Yamashita, Yoshiyuki and Kobayashi, Keisuke",Degradation of interface integrity between a high-k dielectric thin film and a gate electrode due to excess oxygen in the film,"IEEE International Reliability Physics Symposium, 2009, 47th",,Institute of Electrical and Electronics Engineers,2009,2009,,376-381,https://cir.nii.ac.jp/crid/1050282677703866624,https://doi.org/10.1109/irps.2009.5173282