著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
"Wang, T. and Ohno, Y. and Lachab, M. and Nakagawa, D. and Shirahama, T. and Sakai, S. and Ohno, H.",Electron mobility exceeding 104cm2/Vs in an AlGaN-GaN heterostructure grown on a sapphire substrate,Applied Physics Letters,0003-6951,American Institute of Physics,1999,74,23,3531-3533,https://cir.nii.ac.jp/crid/1050282677719830400,https://doi.org/10.1063/1.124151