著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
"Akazaki, Tatsushi and Nitta, Junsaku and Takayanagi, Hideaki and Enoki, Takatomo and Arai, Kunihiro",Improving the mobility of an In0.52Al0.48As/In0.53Ga0.47As inverted modulation‐doped structure by inserting a strained InAs quantum well,Applied Physics Letters,0003-6951,American Institute of Physics,1994,65,10,1263-1265,https://cir.nii.ac.jp/crid/1050282677723618432,https://doi.org/10.1063/1.112089