著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
"El Fatimy, A. and Dyakonova, N. and Meziani, Y. and Otsuji, T. and Knap, W. and Vandenbrouk, S. and Madjour, K. and Theron, D. and Gaquiere, C. and Poisson, M. A. and Delage, S. and Prystawko, P. and Skierbiszewski, C.",AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources,Journal of Applied Physics,0021-8979,American Institute of Physics,2010,107,2,024504,https://cir.nii.ac.jp/crid/1050282677724330752,