Fabrication of C_<60> field-effect transistors with polyimide and Ba_<0.4>Sr_<0.6>Ti_,<0.96>O_3 gate insulators

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抄録

A flexible C_<60> field-effect transistor (FET) device has been fabricated with a polyimide gate insulator on the poly(ethylene terephthalate) substrate, and n-channel normally off FET properties are observed in this FET device. The field-effect mobility, μ, is estimated to be ~10^<-2> cm^2 V^<-1> s^<-1> at 300 K. Furthermore, the C_<60> FET has been fabricated with a high-dielectric Ba_<0.4>Sr_<0.6>Ti_<0.96>O_3(BST) gate insulator, showing n-channel properties; the μ value is estimated to be ~10^<-4> cm^2 V^<-1> s^<-1> at 300 K. The FET device operates at very low gate voltage, V_G, and low drain-source voltage, V_<DS>. Thus these C_<60> FET devices possess flexibility and low-voltage operation characteristic of polyimide and BST gate insulators, respectively.

identifier:00036951

identifier:https://dspace.jaist.ac.jp/dspace/handle/10119/3374

収録刊行物

  • Applied Physics Letters

    Applied Physics Letters 87 (14), 143506-1-143506-3, 2005-10

    AMERICAN INSTITUTE OF PHYSICS

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詳細情報 詳細情報について

  • CRID
    1050282812513697664
  • NII論文ID
    120000861152
  • Web Site
    http://hdl.handle.net/10119/3374
  • 本文言語コード
    en
  • 資料種別
    journal article
  • データソース種別
    • IRDB
    • CiNii Articles
    • KAKEN

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