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非対称ナノブリッジを利用した高温超伝導デバイスの特性

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  • ヒタイショウ ナノブリッジ オ リヨウ シタ コウオン チョウデンドウ デバイス ノ トクセイ
  • The Properties of High-Temperature Superconducting Devices with Asymmetrical Nanobridges

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Abstract

For practical applications of SFQ circuits, it is necessary to decrease power consumption at the current-limiting resistors placed after the power supply. One of the candidates for the solutions is using rectifiers based on asymmetrical nanobridges. The vortex ratchet effect arises in asymmetrical nanobridges, causing asymmetrical I-V characteristics for asymmetrical nanobridges. By utilizing this ratchet effect, semiconductor-like diodes can be made with zero threshold voltage, which make it possible to form rectifiers applicable to SFQ circuits. In this study, we report the properties of high-temperature superconducting (HTS) devises with asymmetrical nanobridges The SQUIDs fabricated exhibit periodic behavior in magnetic field dependence of critical currents and that of voltages.

IEICE Technical Report;SCE2013-56

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