Degenerate p-type conductivity in wide-gap LaCuOS1–xSex (x = 0–1) epitaxial films

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  • Degenerate p-type conductivity in wide-gap LaCuOS1−xSex (x=0–1) epitaxial films

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Epitaxial films of LaCuOS1–xSex (x = 0–1) solid solution were grown on MgO (001) substrates and their electrical and optical properties were examined. Sharp emission due to room-temperature exciton with binding energy of ~50 meV is observed for all x values. Hall mobility becomes large with an increase in the Se content and it reaches 8.0 cm2V–1s–1 in LaCuOSe, a comparable value to that of p-type GaN:Mg. Doping of Mg2+ ions at La3+ sites enhances a hole concentration up to 2.2×1020 cm–3, while maintaining the Hall mobility as large as 4.0 cm2V–1s–1. Consequently, a degenerate p-type electrical conduction with a conductivity of 140 S cm–1 was achieved.

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