Homojunction Diode of Cuinse2 Thin-Film Fabricated by Nitrogen Implantation

DOI IR IR (HANDLE) PDF 2 Citations

Bibliographic Information

Published
1993-08-01
Resource Type
journal article
Rights Information
  • Copyright © 1993 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
DOI
  • 10.1063/1.355296
Publisher
American Institute of Physics

Search this article

Description

Rectifying homojunction have been fabricated in polycrystalline CuInSe2 thin film. The p-n junction diode was obtained by short annealing in nitrogen atmosphere at 450-degrees-C following the ion implantation of nitrogen with the energy and the dose of 50 keV and 1 x 10(15) cm-2, respectively. The properties of the near surface region in the films implanted have been studied by the Raman scattering spectroscopy. The secondary ion mass spectroscopy depth profile of the nitrogens in the CuInSe2 film and the capacitive-voltage characteristics of the rectifying diode have been measured to characterize the junction properties. The photovoltaic characteristics in AM 1.0, 100 mW/cm2 are shown with the efficiency of 0.35%.

Journal

Citations (2)*help

See more

Keywords

Details 詳細情報について

Report a problem

Back to top