Silicon Carbide and Its Nanostructures
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説明
Silicon carbide (SiC) is a promising ceramic for various industrial applications thanks to its excellent properties at high temperature, high power, high frequency, high radiation environment and chemically harsh conditions. Substantial efforts have been made to develop new approaches to the synthesis of SiC and its nanostructures. Nanostructured SiC including nanoparticles and one-dimensional (1D) structures are superior to their bulk counterpart in many properties, and have attracted considerable attention in recent years due to their important role in basic science and their potential applications in electronic and optoelectronic devices, and composite reinforcement. This paper outlines the various methods for fabricating SiC nanostructures.
収録刊行物
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- 名古屋工業大学先進セラミックス研究センター年報 = Annual report Advanced Ceramics Research Center Nagoya Institute of Technology
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名古屋工業大学先進セラミックス研究センター年報 = Annual report Advanced Ceramics Research Center Nagoya Institute of Technology 3 5-10, 2015-07-31
名古屋工業大学先進セラミックス研究センター
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詳細情報 詳細情報について
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- CRID
- 1050845762421110400
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- NII論文ID
- 120005974603
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- NII書誌ID
- AA12617342
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- ISSN
- 21876738
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- Web Site
- http://id.nii.ac.jp/1476/00002378/
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- 本文言語コード
- en
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- 資料種別
- departmental bulletin paper
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- データソース種別
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- IRDB
- CiNii Articles
