走査型プローブ顕微鏡を用いたカーボンナノチューブ薄膜トランジスタの評価・解析
Bibliographic Information
- Other Title
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- ソウサガタ プローブ ケンビキョウ オ モチイタ カーボンナノチューブ ハクマク トランジスタ ノ ヒョウカ カイセキ
- Characterization of carbon nanotube thin-film transistors by scanning probe microscopy
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Abstract
The electrical properties of CNT-FETs fabricated using PECVD were studied by scanning probe microscopy. The measured results suggest the formation of an island structure in the subthreshold regime and disappearance of the island structure at ON state. These results were explained by the change in the effective number of the CNTs which contribute to the electrical conduction due to the gate-bias-dependent resistance of the semiconducting CNTs. The results obtained by Monte Carlo simulation revealed similar results. The effects of metallic CNTs with defects and the scatter of the drain current in the subthreshold regime were also examined.
IEICE Technical Report;ED2010-197, IEICE Technical Report;SDM2010-232
Journal
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- 電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス
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電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス 110 (424), 31-36, 2011-02
一般社団法人電子情報通信学会
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Keywords
Details
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- CRID
- 1050845763734797824
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- NII Article ID
- 110008688781
- 110008689362
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- NII Book ID
- AA1123312X
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- HANDLE
- 2237/23509
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- ISSN
- 09135685
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- Text Lang
- ja
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- Article Type
- journal article
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- Data Source
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- IRDB
- NDL
- CiNii Articles
- KAKEN