著者名,書名,版表示,出版者名,出版年,シリーズ名,番号,ISBN,ISSN,URL "Li, Sheng S.",The dopant density and temperature dependence of electron mobility and resistivity in n-type silicon,,U.S. G.P.O.,1977,NBS special publication,,,,https://cir.nii.ac.jp/crid/1130000796653082368