著者名,書名,版表示,出版者名,出版年,シリーズ名,番号,ISBN,ISSN,URL
"Li, Sheng S.","The theoretical and experimental study of the temperature and dopant density dependence of hole mobility, effective mass, and resistivity in boron-doped silicon",,U.S. G.P.O.,1979,NBS special publication,,,,https://cir.nii.ac.jp/crid/1130000797522130688