著者名,書名,版表示,出版者名,出版年,シリーズ名,番号,ISBN,ISSN,URL
"Park, Byung-Eun",Ferroelectric-gate field effect transistor memories : device physics and applications,,Springer,2016,Topics in applied physics,,9789402408393,,https://cir.nii.ac.jp/crid/1130282272221849344