著者名,書名,版表示,出版者名,出版年,シリーズ名,番号,ISBN,ISSN,URL
"Theodore, L. Tewksbury",Relaxation effects in MOS devices due to tunnel exchange with near-interface oxide traps,,Massachusetts Institute of Technology,1992,,,,,https://cir.nii.ac.jp/crid/1970023484939920786