{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1360002216003334016.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1016/j.jcrysgro.2015.07.001"}},{"identifier":{"@type":"URI","@value":"https://api.elsevier.com/content/article/PII:S0022024815004583?httpAccept=text/xml"}},{"identifier":{"@type":"URI","@value":"https://api.elsevier.com/content/article/PII:S0022024815004583?httpAccept=text/plain"}}],"resourceType":"学術雑誌論文(journal article)","dc:title":[{"@value":"Dramatic reduction of dislocations on a GaN point seed crystal by coalescence of bunched steps during Na-flux growth"}],"description":[{"notation":[{"@value":"Abstract   In our study, we found that threading dislocation density (TDD) in GaN crystals naturally reduced from ~10 9  cm −2  in a seed to less than ~10 3  cm −2 , just by using the small-sized seed called a “point seed”. However, the mechanism of the dramatic reduction was unclear. In order to reveal the mechanism of this substantial reduction of TDD, we investigated the relationship between TDD and the crystal habit during the growth. Cathodoluminescence (CL) and scanning electron microscopy (SEM) images showed that TDD was dramatically reduced after the  c  face became small ( 2 ) in the habit-change process caused by changes of supersaturation during growth, in which bunched steps growing from the edge of the  c  face coalesced at the center. It is thought that the shrinking of the  c  face in the growth process enabled the coalescence of bunched steps, which led to the gathering of threading dislocations (TDs), and resulted in the dramatic reduction of TDD. We concluded that the natural reduction of TDs was caused by coalescence of bunched steps, which easily occurs in during the Na-flux growth on small-sized “point seeds”, and which allowed fabrication of low-dislocation-density GaN wafers."}]}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1380002216003334016","@type":"Researcher","foaf:name":[{"@value":"Masayuki Imanishi"}]},{"@id":"https://cir.nii.ac.jp/crid/1380847869106582662","@type":"Researcher","foaf:name":[{"@value":"Yuma Todoroki"}]},{"@id":"https://cir.nii.ac.jp/crid/1380847869106582656","@type":"Researcher","foaf:name":[{"@value":"Kosuke Murakami"}]},{"@id":"https://cir.nii.ac.jp/crid/1380847869106582657","@type":"Researcher","foaf:name":[{"@value":"Daisuke Matsuo"}]},{"@id":"https://cir.nii.ac.jp/crid/1380847869106582659","@type":"Researcher","foaf:name":[{"@value":"Hiroki Imabayashi"}]},{"@id":"https://cir.nii.ac.jp/crid/1380847869106582784","@type":"Researcher","foaf:name":[{"@value":"Hideo Takazawa"}]},{"@id":"https://cir.nii.ac.jp/crid/1380847869106582663","@type":"Researcher","foaf:name":[{"@value":"Mihoko Maruyama"}]},{"@id":"https://cir.nii.ac.jp/crid/1380847869106582661","@type":"Researcher","foaf:name":[{"@value":"Mamoru Imade"}]},{"@id":"https://cir.nii.ac.jp/crid/1380847869106582658","@type":"Researcher","foaf:name":[{"@value":"Masashi Yoshimura"}]},{"@id":"https://cir.nii.ac.jp/crid/1380847869106582660","@type":"Researcher","foaf:name":[{"@value":"Yusuke Mori"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"00220248"}],"prism:publicationName":[{"@value":"Journal of Crystal Growth"}],"dc:publisher":[{"@value":"Elsevier BV"}],"prism:publicationDate":"2015-10","prism:volume":"427","prism:startingPage":"87","prism:endingPage":"93"},"reviewed":"false","dcterms:accessRights":"http://purl.org/coar/access_right/c_abf2","dc:rights":["https://www.elsevier.com/tdm/userlicense/1.0/","http://www.elsevier.com/open-access/userlicense/1.0/"],"url":[{"@id":"https://api.elsevier.com/content/article/PII:S0022024815004583?httpAccept=text/xml"},{"@id":"https://api.elsevier.com/content/article/PII:S0022024815004583?httpAccept=text/plain"}],"createdAt":"2015-07-09","modifiedAt":"2021-04-11","project":[{"@id":"https://cir.nii.ac.jp/crid/1040282256772782208","@type":"Project","projectIdentifier":[{"@type":"KAKEN","@value":"14J00276"},{"@type":"JGN","@value":"JP14J00276"},{"@type":"URI","@value":"https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-14J00276/"}],"notation":[{"@language":"ja","@value":"Ｎａフラックス法を用いた低反り・低欠陥窒化ガリウムウエハ作製技術の研究開発"}]}],"relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1360003449890516736","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Improvement of crystallinity of GaN layers grown using Ga<sub>2</sub>O vapor synthesized from liquid Ga and H<sub>2</sub>O vapor"}]},{"@id":"https://cir.nii.ac.jp/crid/1360004232262832384","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Vacancy-type defects in bulk GaN grown by the Na-flux method probed using positron annihilation"}]},{"@id":"https://cir.nii.ac.jp/crid/1360009142730619520","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"High‐Quality GaN Crystal Growth Using Flux‐Film‐Coated LPE with Na Flux"}]},{"@id":"https://cir.nii.ac.jp/crid/1360013168832188160","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Effect of additional N2O gas on the suppression of polycrystal formation and high-rate GaN crystal growth by OVPE method"}]},{"@id":"https://cir.nii.ac.jp/crid/1360284924859308928","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Effect of off-angle of stripe patterns on facet stability and embedding in selective-area hydride vapor phase epitaxy growth"}]},{"@id":"https://cir.nii.ac.jp/crid/1360284924859363328","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Recent progress of Na-flux method for GaN crystal growth"}]},{"@id":"https://cir.nii.ac.jp/crid/1360284924867597312","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Habit control during growth on GaN point seed crystals by Na-flux method"}]},{"@id":"https://cir.nii.ac.jp/crid/1360290617879007360","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Local piezoelectric properties in Na-flux GaN bulk single crystals"}]},{"@id":"https://cir.nii.ac.jp/crid/1360292618966812032","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Epitaxial lateral overgrowth of InGaAs on patterned GaAs substrates by liquid phase epitaxy"}]},{"@id":"https://cir.nii.ac.jp/crid/1360294643806094464","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Terahertz time-domain ellipsometry with high precision for the evaluation of GaN crystals with carrier densities up to 1020 cm−3"}]},{"@id":"https://cir.nii.ac.jp/crid/1360565167061559040","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Leakage current analysis for dislocations in Na-flux GaN bulk single crystals by conductive atomic force microscopy"}]},{"@id":"https://cir.nii.ac.jp/crid/1360566396793410944","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)"}]},{"@id":"https://cir.nii.ac.jp/crid/1360566399836019840","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Quantitative analysis of lattice plane microstructure in the growth direction of a modified Na-flux GaN crystal using nanobeam X-ray diffraction"}]},{"@id":"https://cir.nii.ac.jp/crid/1360566399836022016","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Effect of methane additive on GaN growth using the OVPE method"}]},{"@id":"https://cir.nii.ac.jp/crid/1360566399836097152","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Correlation between current leakage and structural properties of threading dislocations in GaN bulk single crystals grown using a Na-flux method"}]},{"@id":"https://cir.nii.ac.jp/crid/1360566399836112896","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Local current leakage at threading dislocations in GaN bulk single crystals grown by a modified Na-flux method"}]},{"@id":"https://cir.nii.ac.jp/crid/1360566399836596224","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Promotion of lateral growth of GaN crystals on point seeds by extraction of substrates from melt in the Na-flux method"}]},{"@id":"https://cir.nii.ac.jp/crid/1360566399836638080","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Monitoring of Ga-Na melt electrical resistance and its correlation with crystal growth on the Na Flux method"}]},{"@id":"https://cir.nii.ac.jp/crid/1360574095344271360","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Cathodoluminescence mapping of epitaxial lateral overgrowth in gallium nitride"}]},{"@id":"https://cir.nii.ac.jp/crid/1360847871765271168","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Demonstration of Blue and Green GaN-Based Vertical-Cavity Surface-Emitting Lasers by Current Injection at Room Temperature"}]},{"@id":"https://cir.nii.ac.jp/crid/1360847871771195136","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"High-Power GaN P-N Junction Blue-Light-Emitting Diodes"}]},{"@id":"https://cir.nii.ac.jp/crid/1360847874812729600","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"High-quality GaN crystals grown from double-polarity hydride vapor phase epitaxy and single-polarization regrowth"}]},{"@id":"https://cir.nii.ac.jp/crid/1360847874814235264","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Fabrication of low-curvature 2 in. GaN wafers by Na-flux coalescence growth technique"}]},{"@id":"https://cir.nii.ac.jp/crid/1360847874817555840","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Effects of Solution Stirring on the Growth of Bulk GaN Single Crystals by Na Flux Method"}]},{"@id":"https://cir.nii.ac.jp/crid/1360847874821179648","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Increase in the growth rate of GaN crystals by using gaseous methane in the Na flux method"}]},{"@id":"https://cir.nii.ac.jp/crid/1360855571324146432","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Orthodox etching of HVPE-grown GaN"}]},{"@id":"https://cir.nii.ac.jp/crid/1360865815507694848","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Monitoring of GaN crystal growth rate in the Na flux growth via electroresistometry of Ga-Na solution"}]},{"@id":"https://cir.nii.ac.jp/crid/1361694366858000384","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Fabrication of a 1.5-inch freestanding GaN substrate by selective dissolution of sapphire using Li after the Na-flux growth"}]},{"@id":"https://cir.nii.ac.jp/crid/1361694370172185472","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Design and Fabrication of GaN p-n Junction Diodes With Negative Beveled-Mesa Termination"}]},{"@id":"https://cir.nii.ac.jp/crid/1361699993772068352","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO)"}]},{"@id":"https://cir.nii.ac.jp/crid/1362262944103006336","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Centimeter-Sized Bulk GaN Single Crystals Grown by the Na-Flux Method with a Necking Technique"}]},{"@id":"https://cir.nii.ac.jp/crid/1362262944593397632","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Growth of GaN single crystals with extremely low dislocation density by two-step dislocation reduction"}]},{"@id":"https://cir.nii.ac.jp/crid/1362262945374179328","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Growth and characterization of freestanding GaN substrates"}]},{"@id":"https://cir.nii.ac.jp/crid/1363107371235659264","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"The effects of surface treatments of the substrates on high-quality GaN crystal growth"}]},{"@id":"https://cir.nii.ac.jp/crid/1363388845668255360","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Effect of carbon additive on increases in the growth rate of 2in GaN single crystals in the Na flux method"}]},{"@id":"https://cir.nii.ac.jp/crid/1363388846142295680","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Transmission electron microscopy of defects in GaN films formed by epitaxial lateral overgrowth"}]},{"@id":"https://cir.nii.ac.jp/crid/1363670320778307712","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Reduction of the threading dislocation density in GaN films grown on vicinal sapphire (0001) substrates"}]},{"@id":"https://cir.nii.ac.jp/crid/1363951795560463360","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Dislocation reduction in GaN crystal by advanced-DEEP"}]},{"@id":"https://cir.nii.ac.jp/crid/1364227869066050688","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Influence of GaN/sapphire contact area on bowing of GaN wafer grown by the Na-flux method with a sapphire dissolution process"}]},{"@id":"https://cir.nii.ac.jp/crid/1390001205212729472","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Current status of GaN power devices"}]},{"@id":"https://cir.nii.ac.jp/crid/1390001206245873920","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@language":"en","@value":"InGaN-Based Multi-Quantum-Well-Structure Laser Diodes."}]},{"@id":"https://cir.nii.ac.jp/crid/1390586731663311744","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"ja","@value":"高効率青色発光ダイオードの発明から学んだ教訓（2014 年ノーベル物理学賞）"},{"@language":"en","@value":"What I Leaned from the Invention of Highly Efficient Blue Light-Emitting Diodes (The Nobel Prize in Physics 2014)"},{"@language":"ja-Kana","@value":"コウコウリツ アオイロ ハッコウ ダイオード ノ ハツメイ カラ マナンダ キョウクン(2014ネン ノーベル ブツリガクショウ)"}]},{"@id":"https://cir.nii.ac.jp/crid/1520290884225857280","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Drastic Decrease in Dislocations during Liquid Phase Epitaxy Growth of GaN Single Crystals Using Na flux Method without Any Artificial Processes"},{"@language":"ja-Kana","@value":"Drastic Decrease in Dislocations during Liquid Phase Epitaxy Growth of GaN Single Crystals Using Na flux Method without Any Artificial Processes"}]}],"dataSourceIdentifier":[{"@type":"CROSSREF","@value":"10.1016/j.jcrysgro.2015.07.001"},{"@type":"KAKEN","@value":"PRODUCT-20491510"},{"@type":"OPENAIRE","@value":"doi_dedup___::1f1ddb8ae86f491286575c8b6550da0a"},{"@type":"CROSSREF","@value":"10.7567/1347-4065/ab0d02_references_DOI_97AcRW3vx8IN6OG86Suq89FcBg2"},{"@type":"CROSSREF","@value":"10.1002/crat.202000042_references_DOI_97AcRW3vx8IN6OG86Suq89FcBg2"},{"@type":"CROSSREF","@value":"10.1016/j.jcrysgro.2021.126495_references_DOI_97AcRW3vx8IN6OG86Suq89FcBg2"},{"@type":"CROSSREF","@value":"10.2184/lsj.51.11_680_references_DOI_97AcRW3vx8IN6OG86Suq89FcBg2"},{"@type":"CROSSREF","@value":"10.7567/1347-4065/ab0d05_references_DOI_97AcRW3vx8IN6OG86Suq89FcBg2"},{"@type":"CROSSREF","@value":"10.7567/1347-4065/ab0d08_references_DOI_97AcRW3vx8IN6OG86Suq89FcBg2"},{"@type":"CROSSREF","@value":"10.7567/1347-4065/ab1392_references_DOI_97AcRW3vx8IN6OG86Suq89FcBg2"},{"@type":"CROSSREF","@value":"10.1016/j.jcrysgro.2017.06.027_references_DOI_97AcRW3vx8IN6OG86Suq89FcBg2"},{"@type":"CROSSREF","@value":"10.1063/5.0018336_references_DOI_97AcRW3vx8IN6OG86Suq89FcBg2"},{"@type":"CROSSREF","@value":"10.1038/s41598-021-97253-z_references_DOI_97AcRW3vx8IN6OG86Suq89FcBg2"},{"@type":"CROSSREF","@value":"10.1109/led.2019.2912395_references_DOI_97AcRW3vx8IN6OG86Suq89FcBg2"},{"@type":"CROSSREF","@value":"10.1063/1.5011345_references_DOI_97AcRW3vx8IN6OG86Suq89FcBg2"},{"@type":"CROSSREF","@value":"10.7567/1347-4065/ab14f9_references_DOI_97AcRW3vx8IN6OG86Suq89FcBg2"},{"@type":"CROSSREF","@value":"10.7567/1882-0786/ab1fc3_references_DOI_97AcRW3vx8IN6OG86Suq89FcBg2"},{"@type":"CROSSREF","@value":"10.7567/jjap.56.01ad01_references_DOI_97AcRW3vx8IN6OG86Suq89FcBg2"},{"@type":"CROSSREF","@value":"10.7567/1347-4065/ab0d03_references_DOI_97AcRW3vx8IN6OG86Suq89FcBg2"},{"@type":"CROSSREF","@value":"10.7567/1347-4065/ab112e_references_DOI_97AcRW3vx8IN6OG86Suq89FcBg2"},{"@type":"CROSSREF","@value":"10.7567/1882-0786/ab0db6_references_DOI_97AcRW3vx8IN6OG86Suq89FcBg2"},{"@type":"CROSSREF","@value":"10.7567/jjap.55.05fb04_references_DOI_97AcRW3vx8IN6OG86Suq89FcBg2"},{"@type":"CROSSREF","@value":"10.7567/jjap.56.055502_references_DOI_97AcRW3vx8IN6OG86Suq89FcBg2"},{"@type":"CROSSREF","@value":"10.1016/j.jcrysgro.2023.127292_references_DOI_97AcRW3vx8IN6OG86Suq89FcBg2"},{"@type":"CROSSREF","@value":"10.1016/j.jcrysgro.2019.125462_references_DOI_97AcRW3vx8IN6OG86Suq89FcBg2"},{"@type":"CROSSREF","@value":"10.35848/1347-4065/ab699b_references_DOI_97AcRW3vx8IN6OG86Suq89FcBg2"}]}