{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1360002216165062016.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1016/j.solmat.2015.07.025"}},{"identifier":{"@type":"URI","@value":"https://api.elsevier.com/content/article/PII:S0927024815003621?httpAccept=text/plain"}},{"identifier":{"@type":"URI","@value":"https://api.elsevier.com/content/article/PII:S0927024815003621?httpAccept=text/xml"}}],"resourceType":"学術雑誌論文(journal article)","dc:title":[{"@value":"Reaction path for formation of Cu2SnSe3 film by selenization of Cu–Sn precursor"}],"description":[{"notation":[{"@value":"Abstract   Reaction path for fabrication of Cu 2 SnSe 3  (CTSe) film by selenization of Cu–Sn precursor was investigated via in-situ X-ray diffraction (XRD) as well as glazing incident XRD (GIXRD) measurements. Cross-sectional scanning electron microscopy (SEM)-energy dispersive spectrometry (EDS) and transmission electron microscope (TEM) analyses revealed the element and phase distribution along the depth direction. Based on these results, a proposed growth model was concluded below: first, the Se atoms from evaporation source reacted with Cu and Sn atoms to produce Cu 2− x  Se and SnSe 2  phases. Noticeably, resulting film presented bilayer feature with Cu 2− x  Se located at the surface and SnSe 2  located at bottom. Second, CTSe phase formed at the interface of Cu 2− x  Se and SnSe 2  as the increasing temperature. The Cu 2− x  Se was depleted by Sn-related secondary phases when the Cu/Sn ratio was smaller than 1.72. The secondary phases of SnSe 2  and SnSe were coexisted with CTSe phase independent of Cu/Sn ratio in metallic precursor, which was attributed to the weak diffusion ability of Sn and Sn-related secondary phases in the CTSe film. The origins for high carrier concentration in CTSe films were ascribed to the Cu 2− x  Se and intrinsic acceptor concentration and effective approach to reduce the value was explored. An attempt of solar cell with CTSe as absorber was performed and photocurrent of 9.9 mA/cm 2  was detected."}]}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1410001205512513283","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000258712240"},{"@type":"NRID","@value":"9000401806081"},{"@type":"NRID","@value":"9000402006949"},{"@type":"NRID","@value":"9000402026346"},{"@type":"NRID","@value":"9000402024570"},{"@type":"NRID","@value":"9000401572509"},{"@type":"RESEARCHMAP","@value":"https://researchmap.jp/7000013294"}],"foaf:name":[{"@value":"Zeguo Tang"}]},{"@id":"https://cir.nii.ac.jp/crid/1380003444344482566","@type":"Researcher","foaf:name":[{"@value":"Kenta Aoyagi"}]},{"@id":"https://cir.nii.ac.jp/crid/1380003444344482565","@type":"Researcher","foaf:name":[{"@value":"Yuki Nukui"}]},{"@id":"https://cir.nii.ac.jp/crid/1380003444344482563","@type":"Researcher","foaf:name":[{"@value":"Kiichi Kosaka"}]},{"@id":"https://cir.nii.ac.jp/crid/1380003444344482564","@type":"Researcher","foaf:name":[{"@value":"Hikaru Uegaki"}]},{"@id":"https://cir.nii.ac.jp/crid/1380003444344482560","@type":"Researcher","foaf:name":[{"@value":"Jakapan Chatana"}]},{"@id":"https://cir.nii.ac.jp/crid/1380003444344482562","@type":"Researcher","foaf:name":[{"@value":"Daisuke Hironiwa"}]},{"@id":"https://cir.nii.ac.jp/crid/1380003444344482561","@type":"Researcher","foaf:name":[{"@value":"Takashi Minemoto"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"09270248"}],"prism:publicationName":[{"@value":"Solar Energy Materials and Solar Cells"}],"dc:publisher":[{"@value":"Elsevier BV"}],"prism:publicationDate":"2015-12","prism:volume":"143","prism:startingPage":"311","prism:endingPage":"318"},"reviewed":"false","dc:rights":["https://www.elsevier.com/tdm/userlicense/1.0/"],"url":[{"@id":"https://api.elsevier.com/content/article/PII:S0927024815003621?httpAccept=text/plain"},{"@id":"https://api.elsevier.com/content/article/PII:S0927024815003621?httpAccept=text/xml"}],"createdAt":"2015-07-29","modifiedAt":"2019-08-28","project":[{"@id":"https://cir.nii.ac.jp/crid/1040282257293689600","@type":"Project","projectIdentifier":[{"@type":"KAKEN","@value":"26820103"},{"@type":"JGN","@value":"JP26820103"},{"@type":"URI","@value":"https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-26820103/"}],"notation":[{"@language":"ja","@value":"Fabrication of high efficiency rare metal free Cu2SnS3 thin film solar cell"},{"@language":"en","@value":"Fabrication of high efficiency rare metal free Cu2SnS3 thin film solar cell"}]}],"relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1360284924866381952","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Sputtered (Zn,Mg)O buffer layer for band offset control in Cu<sub>2</sub>ZnSn(S,Se)<sub>4</sub> solar cells"}]},{"@id":"https://cir.nii.ac.jp/crid/1360565171312282880","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Cu<sub>2</sub>SnS<sub>3</sub>thin-film solar cells fabricated by sulfurization from NaF/Cu/Sn stacked precursor"}]},{"@id":"https://cir.nii.ac.jp/crid/1360566399837769728","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Cu<sub>2</sub>ZnSnSe<sub>4</sub>thin-film solar cells fabricated using Cu<sub>2</sub>SnSe<sub>3</sub>and ZnSe bilayers"}]},{"@id":"https://cir.nii.ac.jp/crid/1360855568791827328","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Growth of CuInSe<sub>2</sub> crystals in Cu-rich Cu–In–Se thin films"}]},{"@id":"https://cir.nii.ac.jp/crid/1360855569047427328","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Electrical properties of Cu2−xSe thin films and their application for solar cells"}]},{"@id":"https://cir.nii.ac.jp/crid/1361137044520187776","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Ultralow thermal conductivity and high thermoelectric figure of merit in SnSe crystals"}]},{"@id":"https://cir.nii.ac.jp/crid/1361137045526115968","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Potassium-induced surface modification of Cu(In,Ga)Se2 thin films for high-efficiency solar cells"}]},{"@id":"https://cir.nii.ac.jp/crid/1361418518760871040","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"A study of kesterite Cu2ZnSn(Se,S)4 formation from sputtered Cu–Zn–Sn metal precursors by rapid thermal processing sulfo-selenization of the metal thin films"}]},{"@id":"https://cir.nii.ac.jp/crid/1361418521162285952","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Reduction of secondary phases in Cu2SnSe3 absorbers for solar cell application"}]},{"@id":"https://cir.nii.ac.jp/crid/1361418521204363904","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Study on Phase Formation Mechanism of Non- and Near-Stoichiometric Cu<sub>2</sub>ZnSn(S,Se)<sub>4</sub> Film Prepared by Selenization of Cu–Sn–Zn–S Precursors"}]},{"@id":"https://cir.nii.ac.jp/crid/1361418521446078464","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Formation of Cu-Sn Alloy Layer by Contact Deposition Using Quaternary Ammonium-Imide-Type Ionic Liquid"}]},{"@id":"https://cir.nii.ac.jp/crid/1361981469334174976","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Crystallization of Cu2ZnSnSe4 compound by solid state reaction using elemental powders"}]},{"@id":"https://cir.nii.ac.jp/crid/1361981470060063488","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Influence of precursor sulfur content on film formation and compositional changes in Cu2ZnSnS4 films and solar cells"}]},{"@id":"https://cir.nii.ac.jp/crid/1362262944021585408","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Growth and characterization of coevaporated Cu2SnSe3 thin films for photovoltaic applications"}]},{"@id":"https://cir.nii.ac.jp/crid/1362262944723711616","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Structural, electrical and optical properties of copper selenide thin films deposited by chemical bath deposition technique"}]},{"@id":"https://cir.nii.ac.jp/crid/1362262945562592128","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Lead‐free reflow soldering for electronics 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solution"}]},{"@id":"https://cir.nii.ac.jp/crid/1363107368413495296","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Reaction kinetics of α-CuInSe2 formation from an In2Se3/CuSe bilayer precursor film"}]},{"@id":"https://cir.nii.ac.jp/crid/1363107368851687680","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Effect of post-deposition annealing on the performance of D.C. sputtered Cu2SnSe3 thin films"}]},{"@id":"https://cir.nii.ac.jp/crid/1363107369248004352","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Investigation of SnSe, SnSe2, and Sn2Se3 alloys for phase change memory applications"}]},{"@id":"https://cir.nii.ac.jp/crid/1363107369339778304","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Compositional investigation of potassium doped Cu(In,Ga)Se<sub>2</sub>solar cells with efficiencies up to 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films"}]},{"@id":"https://cir.nii.ac.jp/crid/1363670319735128448","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"New Monoclinic Phase at the Composition Cu<sub>2</sub>SnSe<sub>3</sub> and Its Thermoelectric Properties"}]},{"@id":"https://cir.nii.ac.jp/crid/1363951793608331904","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Properties of Cu(In,Ga)Se<sub>2</sub>\n solar cells with new record efficiencies up to 21.7%"}]},{"@id":"https://cir.nii.ac.jp/crid/1363951793658971136","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Single-step sputtered Cu2SnSe3 films using the targets composed of Cu2Se and SnSe2"}]},{"@id":"https://cir.nii.ac.jp/crid/1363951794719152768","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Investigation of the solid state reactions by time-resolved X-ray diffraction while crystallizing kesterite Cu2ZnSnSe4 thin films"}]},{"@id":"https://cir.nii.ac.jp/crid/1363951795074445824","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Cu[sub 2]SnS[sub 3] and Cu[sub 4]SnS[sub 4] Thin Films via Chemical Deposition for Photovoltaic Application"}]},{"@id":"https://cir.nii.ac.jp/crid/1363951795804324864","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Growth of Cu2SnS3 thin films by solid reaction under sulphur atmosphere"}]},{"@id":"https://cir.nii.ac.jp/crid/1364233268428033920","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"The crystallisation of Cu2ZnSnS4 thin film solar cell absorbers from co-electroplated Cu–Zn–Sn precursors"}]},{"@id":"https://cir.nii.ac.jp/crid/1370568619367074946","@type":"Product","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Cu2ZnSnSe4 thin-film solar cells by thermal coevaporation with 11.6% efficiency and improved minority carrier diffusion length"}]}],"dataSourceIdentifier":[{"@type":"CROSSREF","@value":"10.1016/j.solmat.2015.07.025"},{"@type":"KAKEN","@value":"PRODUCT-20589535"},{"@type":"OPENAIRE","@value":"doi_dedup___::eae7542cd14311a0be62fb28081d96a0"}]}