{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1360002216613610368.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1021/acsami.5b06370"}},{"identifier":{"@type":"URI","@value":"https://pubs.acs.org/doi/pdf/10.1021/acsami.5b06370"}},{"identifier":{"@type":"PMID","@value":"26340378"}}],"resourceType":"学術雑誌論文(journal article)","dc:title":[{"@value":"Microchannel Wetting for Controllable Patterning and Alignment of Silver Nanowire with High Resolution"}],"description":[{"notation":[{"@value":"Patterning and alignment of conductive nanowires are essential for good electrical isolation and high conductivity in various applications. Herein a facile bottom-up, additive technique is developed to pattern and align silver nanowires (AgNWs) by manipulating wetting of dispersions in microchannels. By forming hydrophobic/hydrophilic micropatterns down to 8 μm with fluoropolymer (Cytop) and SiO2, the aqueous AgNW dispersions with the optimized surface tension and viscosity self-assemble into microdroplets and then dry to form anisotropic AgNW networks. The alignment degree characterized by the full width at half-maximum (FWHM) can be well-controlled from 39.8° to 84.1° by changing the width of microchannels. A mechanism is proposed and validated by statistical analysis on AgNW alignment, and a static model is proposed to guide the patterning of general NWs. The alignment reduced well the electrical resistivity of AgNW networks by a factor of 5 because of the formation of efficient percolation path for carrier conduction."}]}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1380003444799518976","@type":"Researcher","foaf:name":[{"@value":"Bo-Ru Yang"}],"jpcoar:affiliationName":[{"@value":"School of Microelectronics, School of Physics\rand Engineering, Guangdong Province Key Laboratory of Display Material\rand Technology, State Key Laboratory of Optoelectronic Materials and\rTechnologies, Sun Yat-Sen University, Guangzhou 510275, People’s Republic of China"},{"@value":"SYSU-CMU Shunde International Joint Research Institute, Shunde 528000, People’s Republic of China"}]},{"@id":"https://cir.nii.ac.jp/crid/1380003444799518979","@type":"Researcher","foaf:name":[{"@value":"Wu Cao"}],"jpcoar:affiliationName":[{"@value":"School of Microelectronics, School of Physics\rand Engineering, Guangdong Province Key Laboratory of Display Material\rand Technology, State Key Laboratory of Optoelectronic Materials and\rTechnologies, Sun Yat-Sen University, Guangzhou 510275, People’s Republic of China"}]},{"@id":"https://cir.nii.ac.jp/crid/1380003444799518980","@type":"Researcher","foaf:name":[{"@value":"Gui-Shi Liu"}],"jpcoar:affiliationName":[{"@value":"School of Microelectronics, School of Physics\rand Engineering, Guangdong Province Key Laboratory of Display Material\rand Technology, State Key Laboratory of Optoelectronic Materials and\rTechnologies, Sun Yat-Sen University, Guangzhou 510275, People’s Republic of China"}]},{"@id":"https://cir.nii.ac.jp/crid/1380003444799518984","@type":"Researcher","foaf:name":[{"@value":"Hui-Jiuan Chen"}],"jpcoar:affiliationName":[{"@value":"SYSU-CMU Shunde International Joint Research Institute, Shunde 528000, People’s Republic of China"}]},{"@id":"https://cir.nii.ac.jp/crid/1380003444799518985","@type":"Researcher","foaf:name":[{"@value":"Yong-Young Noh"}],"jpcoar:affiliationName":[{"@value":"Department of Energy and\rMaterials Engineering, Dongguk University, 26 Pil-dong, 3 ga, Jung-gu, Seoul 100-715, Republic of Korea"}]},{"@id":"https://cir.nii.ac.jp/crid/1420001326215093248","@type":"Researcher","personIdentifier":[{"@type":"KAKEN_RESEARCHERS","@value":"90443035"},{"@type":"NRID","@value":"1000090443035"},{"@type":"NRID","@value":"9000273033563"},{"@type":"NRID","@value":"9000257731503"},{"@type":"NRID","@value":"9000402796870"},{"@type":"NRID","@value":"9000006351089"},{"@type":"NRID","@value":"9000356886732"},{"@type":"NRID","@value":"9000402034037"},{"@type":"NRID","@value":"9000392783757"},{"@type":"NRID","@value":"9000347154612"},{"@type":"NRID","@value":"9000025061941"},{"@type":"NRID","@value":"9000412318277"},{"@type":"NRID","@value":"9000408493703"},{"@type":"NRID","@value":"9000392023305"},{"@type":"NRID","@value":"9000401566641"},{"@type":"NRID","@value":"9000401784570"}],"foaf:name":[{"@value":"Takeo Minari"}],"jpcoar:affiliationName":[{"@value":"International Center for Materials Nanoarchitectonics\r(WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan"}]},{"@id":"https://cir.nii.ac.jp/crid/1380003444799518978","@type":"Researcher","foaf:name":[{"@value":"Hsiang-Chih Hsiao"}],"jpcoar:affiliationName":[{"@value":"Shenzhen China Star Optoelectronics Technology Co., Ltd., Guangming New District No. 9-2, Tangming Road, Shenzhen 518132, People’s Republic of China"}]},{"@id":"https://cir.nii.ac.jp/crid/1380003444799518977","@type":"Researcher","foaf:name":[{"@value":"Chia-Yu Lee"}],"jpcoar:affiliationName":[{"@value":"Shenzhen China Star Optoelectronics Technology Co., Ltd., Guangming New District No. 9-2, Tangming Road, Shenzhen 518132, People’s Republic of China"}]},{"@id":"https://cir.nii.ac.jp/crid/1380003444799518983","@type":"Researcher","foaf:name":[{"@value":"Han-Ping D. Shieh"}],"jpcoar:affiliationName":[{"@value":"Department of Photonics/Display\rInstitute, National Chiao Tung University, Hsinchu 300, Taiwan"}]},{"@id":"https://cir.nii.ac.jp/crid/1380003444799518982","@type":"Researcher","foaf:name":[{"@value":"Chuan Liu"}],"jpcoar:affiliationName":[{"@value":"School of Microelectronics, School of Physics\rand Engineering, Guangdong Province Key Laboratory of Display Material\rand Technology, State Key Laboratory of Optoelectronic Materials and\rTechnologies, Sun Yat-Sen University, Guangzhou 510275, People’s Republic of China"},{"@value":"SYSU-CMU Shunde International Joint Research Institute, Shunde 528000, People’s Republic of China"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"19448244"},{"@type":"EISSN","@value":"19448252"}],"prism:publicationName":[{"@value":"ACS Applied Materials & Interfaces"}],"dc:publisher":[{"@value":"American Chemical Society (ACS)"}],"prism:publicationDate":"2015-09-15","prism:volume":"7","prism:number":"38","prism:startingPage":"21433","prism:endingPage":"21441"},"reviewed":"false","url":[{"@id":"https://pubs.acs.org/doi/pdf/10.1021/acsami.5b06370"}],"createdAt":"2015-09-04","modifiedAt":"2023-04-23","project":[{"@id":"https://cir.nii.ac.jp/crid/1040000782286008448","@type":"Project","projectIdentifier":[{"@type":"KAKEN","@value":"26286040"},{"@type":"JGN","@value":"JP26286040"},{"@type":"URI","@value":"https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-26286040/"}],"notation":[{"@language":"ja","@value":"完全室温印刷による超高移動度有機トランジスタ"},{"@language":"en","@value":"High performance organic thin-film transistors by room-temperature printing"}]}],"relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1050568617173428096","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Intermediate Wetting State at Nano/Microstructured 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