High quality semipolar (11¯02) AlGaN/AlN quantum wells with remarkably enhanced optical transition probabilities

DOI PDF 被引用文献17件 参考文献21件
  • S. Ichikawa
    Kyoto University 1 Department of Electronic Science and Engineering, , Kyoto 615-8510, Japan
  • Y. Iwata
    Kyoto University 1 Department of Electronic Science and Engineering, , Kyoto 615-8510, Japan
  • M. Funato
    Kyoto University 1 Department of Electronic Science and Engineering, , Kyoto 615-8510, Japan
  • S. Nagata
    JFE Mineral Co. Ltd. 2 , Chiba 260-0826, Japan
  • Y. Kawakami
    Kyoto University 1 Department of Electronic Science and Engineering, , Kyoto 615-8510, Japan

説明

<jats:p>Adjusting the growth conditions from those for c-plane growth realizes high-quality semipolar (11¯02) AlGaN/AlN quantum wells (QWs) with atomically smooth surfaces and abrupt interfaces on AlN substrates. Upon comparing the optical properties to those of c-plane QWs using time-integrated and time-resolved photoluminescence spectroscopy, the estimated internal electric field is much smaller in (11¯02) AlGaN/AlN QWs than in c-plane QWs. Thus, (11¯02) AlGaN/AlN QWs have narrower emission line widths and remarkably faster radiative recombination lifetimes, realizing highly efficient deep ultraviolet emissions.</jats:p>

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