{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1360003446834046336.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1143/apex.1.041202"}},{"identifier":{"@type":"URI","@value":"http://stacks.iop.org/1882-0786/1/i=4/a=041202/pdf"}},{"identifier":{"@type":"NAID","@value":"210000013978"}}],"dc:title":[{"@value":"Enhancement-Mode ZnO Thin-Film Transistor Grown by Metalorganic Chemical Vapor Deposition"}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1582824503076615297","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000401564401"}],"foaf:name":[{"@value":"Jungyol Jo"}]},{"@id":"https://cir.nii.ac.jp/crid/1582824503076615296","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000401564402"}],"foaf:name":[{"@value":"Ogweon Seo"}]},{"@id":"https://cir.nii.ac.jp/crid/1582824503076615424","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000401564403"}],"foaf:name":[{"@value":"Hyoshik Choi"}]},{"@id":"https://cir.nii.ac.jp/crid/1582824503076615425","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000401564404"}],"foaf:name":[{"@value":"Byeonggon Lee"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"18820778"},{"@type":"EISSN","@value":"18820786"},{"@type":"PISSN","@value":"http://id.crossref.org/issn/18820786"}],"prism:publicationName":[{"@value":"Applied Physics Express"}],"dc:publisher":[{"@value":"IOP Publishing"}],"prism:publicationDate":"2008-04-11","prism:volume":"1","prism:startingPage":"041202"},"reviewed":"false","url":[{"@id":"http://stacks.iop.org/1882-0786/1/i=4/a=041202/pdf"}],"createdAt":"2008-04-11","modifiedAt":"2020-05-31","relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1360002217100847360","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Electrical properties of amorphous-Al2O3/single-crystal ZnO heterointerfaces"}]},{"@id":"https://cir.nii.ac.jp/crid/1360003446855306240","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"The Role of High-κ TiHfO Gate Dielectric in Sputtered ZnO Thin-Film Transistors"}]},{"@id":"https://cir.nii.ac.jp/crid/1360003449884912256","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Improved Characteristics of Metal Organic Chemical Vapor Deposition-Grown ZnO Thin-Film Transistors by Controlling VI/II Ratio of ZnO Film Growth and Using a Modified Thin-Film Transistor Layer Structure"}]},{"@id":"https://cir.nii.ac.jp/crid/1360284921832873856","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Improved Characteristics of Metal Organic Chemical Vapor Deposition-Grown ZnO Thin-Film Transistors by Controlling VI/II Ratio of ZnO Film Growth and Using a Modified Thin-Film Transistor Layer Structure"}]},{"@id":"https://cir.nii.ac.jp/crid/1360566396808774656","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Enhancement-Mode Metal Organic Chemical Vapor Deposition-Grown ZnO Thin-Film Transistors on Glass Substrates Using N<sub>2</sub>O Plasma Treatment"}]},{"@id":"https://cir.nii.ac.jp/crid/1360847871764469248","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Hetero-Epitaxial Growth of ZnO Film by Temperature-Modulated Metalorganic Chemical Vapor Deposition"}]},{"@id":"https://cir.nii.ac.jp/crid/1360848660799814912","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Comparison between ZnO films grown by plasma-assisted atomic layer deposition using H2O plasma and O2 plasma as oxidant"}]},{"@id":"https://cir.nii.ac.jp/crid/1360855569399896960","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Unintentional doping and compensation effects of carbon in metal-organic chemical-vapor deposition fabricated ZnO thin films"}]},{"@id":"https://cir.nii.ac.jp/crid/1361418520444831232","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Hydrogen as a Cause of Doping in Zinc Oxide"}]},{"@id":"https://cir.nii.ac.jp/crid/1361699996137299968","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Residual Native Shallow Donor in ZnO"}]},{"@id":"https://cir.nii.ac.jp/crid/1362544420944647040","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"ZnO thin-film transistors with polycrystalline (Ba,Sr)TiO3 gate insulators"}]},{"@id":"https://cir.nii.ac.jp/crid/1363107368528375936","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Intrinsic<i>n</i>-type versus<i>p</i>-type doping asymmetry and the defect physics of ZnO"}]},{"@id":"https://cir.nii.ac.jp/crid/1363107368566946816","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer"}]},{"@id":"https://cir.nii.ac.jp/crid/1364233268664035456","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors"}]},{"@id":"https://cir.nii.ac.jp/crid/1390282681233665280","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Effects of ZnO/MgO Double Buffer Layers on Structural Quality and Electron Mobility of ZnO Epitaxial Films Grown on c-Plane Sapphire."},{"@value":"Effects of ZnO/MaO Double Buffer Layers on Structural Quality and Electron Mobility of ZnO Epitaxial Films Grown on c-Plane Sapphire"}]},{"@id":"https://cir.nii.ac.jp/crid/1390282681240752256","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Blue Light-Emitting Diode Based on ZnO"}]},{"@id":"https://cir.nii.ac.jp/crid/1520009407864103808","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Effect of hydrogen in zinc oxide thin-film transistor grown by metal organic chemical vapor deposition"},{"@language":"ja-Kana","@value":"Effect of hydrogen in zinc oxide thin film transistor grown by metal organic chemical vapor deposition"}]},{"@id":"https://cir.nii.ac.jp/crid/1522543654644394496","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Oxygen Plasma Functioning of Charge Carrier Density in Zinc Oxide Thin-Film Transistors"}]}],"dataSourceIdentifier":[{"@type":"CROSSREF","@value":"10.1143/apex.1.041202"},{"@type":"CIA","@value":"210000013978"},{"@type":"CROSSREF","@value":"10.1063/1.4826538_references_DOI_NgdONdqW04hK7Ij5OSkwyCcDO0S"},{"@type":"CROSSREF","@value":"10.7567/apex.6.076501_references_DOI_NgdONdqW04hK7Ij5OSkwyCcDO0S"},{"@type":"CROSSREF","@value":"10.1116/1.4771666_references_DOI_NgdONdqW04hK7Ij5OSkwyCcDO0S"},{"@type":"CROSSREF","@value":"10.7567/jjap.50.04dj08_references_DOI_NgdONdqW04hK7Ij5OSkwyCcDO0S"},{"@type":"CROSSREF","@value":"10.1143/apex.2.045502_references_DOI_NgdONdqW04hK7Ij5OSkwyCcDO0S"},{"@type":"CROSSREF","@value":"10.1143/jjap.49.04da12_references_DOI_NgdONdqW04hK7Ij5OSkwyCcDO0S"},{"@type":"CROSSREF","@value":"10.1143/jjap.49.04df20_references_DOI_NgdONdqW04hK7Ij5OSkwyCcDO0S"},{"@type":"CROSSREF","@value":"10.1143/jjap.50.04dj08_references_DOI_NgdONdqW04hK7Ij5OSkwyCcDO0S"}]}