{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1360003446841329792.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1143/jjap.31.2995"}},{"identifier":{"@type":"URI","@value":"https://iopscience.iop.org/article/10.1143/JJAP.31.2995"}},{"identifier":{"@type":"URI","@value":"https://iopscience.iop.org/article/10.1143/JJAP.31.2995/pdf"}},{"identifier":{"@type":"NAID","@value":"210000032215"}}],"dc:title":[{"@value":"Preparation of Pb(Zr, Ti)O<sub>3</sub> Thin Films Using All Dipivaloylmethane Source Materials by Metalorganic Chemical Vapor Deposition"}],"description":[{"type":"abstract","notation":[{"@value":"<jats:p> \n   Pb-bis-dipivaloylmethane [Pb(DPM)<jats:sub>2</jats:sub>], Zr(DPM)<jats:sub>4</jats:sub> and Ti(DPM)<jats:sub>2</jats:sub>(<jats:italic>i</jats:italic>-OC<jats:sub>3</jats:sub>H<jats:sub>7</jats:sub>)<jats:sub>2</jats:sub> are developed as the new chemical vapor deposition (CVD) sources for lead zirconate titanate (PZT) thin film. The growth rate of each of the single metal oxides PbO, ZrO<jats:sub>2</jats:sub> and TiO<jats:sub>2</jats:sub>, was studied as a function of oxygen partial pressure. The growth rates of ZrO<jats:sub>2</jats:sub> and TiO<jats:sub>2</jats:sub> were independent of the input oxygen partial pressure, while the growth rate of PbO increased with increasing input oxygen partial pressure. PZT films were grown on (100) MgO substrates at 2.0 Torr by metalorganic chemical vapor deposition (MOCVD). The film grown at 500°C was amorphous. The film grown at 550°C was a mixed phase of <jats:italic>a</jats:italic>-axis- and <jats:italic>c</jats:italic>-axis-oriented perovskite. The film grown at 600°C was a single-phase <jats:italic>c</jats:italic>-axis-oriented perovskite. \n </jats:p>"}]}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1583950402986135427","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000401628858"}],"foaf:name":[{"@value":"Hiroshi Yamazaki"}]},{"@id":"https://cir.nii.ac.jp/crid/1583950402986135426","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000401628859"}],"foaf:name":[{"@value":"Tomoko Tsuyama"}]},{"@id":"https://cir.nii.ac.jp/crid/1380016863227416832","@type":"Researcher","foaf:name":[{"@value":"Ichizo Kobayashi Ichizo Kobayashi"}]},{"@id":"https://cir.nii.ac.jp/crid/1380016863227416833","@type":"Researcher","foaf:name":[{"@value":"Yoshiaki Sugimori Yoshiaki Sugimori"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"00214922"},{"@type":"EISSN","@value":"13474065"}],"prism:publicationName":[{"@value":"Japanese Journal of Applied Physics"}],"dc:publisher":[{"@value":"IOP Publishing"}],"prism:publicationDate":"1992-09-01","prism:volume":"31","prism:number":"9S","prism:startingPage":"2995"},"reviewed":"false","dc:rights":["https://iopscience.iop.org/page/copyright","https://iopscience.iop.org/info/page/text-and-data-mining"],"url":[{"@id":"https://iopscience.iop.org/article/10.1143/JJAP.31.2995"},{"@id":"https://iopscience.iop.org/article/10.1143/JJAP.31.2995/pdf"}],"createdAt":"2005-02-23","modifiedAt":"2022-12-06","relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1360284921816374912","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Preparation of c-Axis-Oriented PbTiO<sub>3</sub> Thin Films by MOCVD under Reduced Pressure"}]},{"@id":"https://cir.nii.ac.jp/crid/1360579819023478016","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Preparation and properties of (Pb,La)(Zr,Ti)O3 thin films by metalorganic chemical vapor deposition"}]},{"@id":"https://cir.nii.ac.jp/crid/1360847871770551040","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Preparation of C-Axis-Oriented PLT Thin Films by the Metalorganic Chemical Vapor Deposition Method"}]},{"@id":"https://cir.nii.ac.jp/crid/1390001206250163456","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Synthesis of Ti(DPM)2(OCH3)2 and Evaluation of the TiO2 Films Prepared by Metal-Organic Chemical Vapor Deposition."},{"@language":"ja-Kana","@value":"Synthesis of Ti DPM 2 OCH3 2 and Evalua"},{"@value":"Synthesis of Ti(DPM)<sub>2</sub>(OCH<sub>3</sub>)<sub>2</sub> and Evaluation of the TiO<sub>2</sub> Films Prepared  by Metal-Organic Chemical Vapor Deposition"}]},{"@id":"https://cir.nii.ac.jp/crid/1390001206250220032","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Preparation of SrTiO3 Films on 8-Inch Wafers by Chemical Vapor Deposition."},{"@language":"ja-Kana","@value":"Preparation of SrTiO3 Films on 8-Inch W"},{"@value":"Preparation of SrTiO<sub>3</sub> Films on 8-Inch Wafers by Chemical Vapor Deposition"}]}],"dataSourceIdentifier":[{"@type":"CROSSREF","@value":"10.1143/jjap.31.2995"},{"@type":"CIA","@value":"210000032215"},{"@type":"CROSSREF","@value":"10.1143/jjap.36.5820_references_DOI_O3mNdbPosAONAUlWrdZnPobKybo"},{"@type":"CROSSREF","@value":"10.1143/jjap.35.4875_references_DOI_O3mNdbPosAONAUlWrdZnPobKybo"}]}