{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1360003446841382912.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1143/jjap.31.3533"}},{"identifier":{"@type":"URI","@value":"https://iopscience.iop.org/article/10.1143/JJAP.31.3533"}},{"identifier":{"@type":"URI","@value":"https://iopscience.iop.org/article/10.1143/JJAP.31.3533/pdf"}},{"identifier":{"@type":"NAID","@value":"210000032358"}}],"dc:title":[{"@value":"Displacement Damage Effects and Related Phase Changes of Ar-Ion-Irradiated BiSrCaCuO System Superconducting Thin Films"}],"description":[{"type":"abstract","notation":[{"@value":"<jats:p> \n   BiSrCaCuO thin films of 0.5 µm thickness containing mainly the high-<jats:italic>T</jats:italic>\n                  <jats:sub>c</jats:sub> phase were irradiated with 100 keV Ar ions up to 5×10<jats:sup>17</jats:sup> ions/cm<jats:sup>2</jats:sup> at 10 K or 300 K. The irradiated thin films were considered to consist of a heavily damaged surface layer and an underlying partly displaced crystalline layer. The transition temperature <jats:italic>T</jats:italic>\n                  <jats:sub>c</jats:sub> of the films decreased initially with increasing Ar ion dose and converged at about 63 K for doses larger than 1×10<jats:sup>17</jats:sup> ions/cm<jats:sup>2</jats:sup>. By a subsequent annealing below 800°C, the <jats:italic>T</jats:italic>\n                  <jats:sub>c</jats:sub> recovered up to 98 K. The relative X-ray diffraction intensity of the high-<jats:italic>T</jats:italic>\n                  <jats:sub>c</jats:sub> phase reached a maximum upon annealing at 700∼730°C. During the annealing, the heavily damaged or amorphous surface layer recrystallizes and regrows into better quality high-<jats:italic>T</jats:italic>\n                  <jats:sub>c</jats:sub> phase particles with concomitant formation of the thermodynamically stable Ca-free phase at this low temperature range. \n </jats:p>"}]}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1380016862320147840","@type":"Researcher","foaf:name":[{"@value":"Masatsugu Kaise Masatsugu Kaise"}]},{"@id":"https://cir.nii.ac.jp/crid/1380016862320147712","@type":"Researcher","foaf:name":[{"@value":"Kazuo Saito Kazuo Saito"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"00214922"},{"@type":"EISSN","@value":"13474065"}],"prism:publicationName":[{"@value":"Japanese Journal of Applied Physics"}],"dc:publisher":[{"@value":"IOP Publishing"}],"prism:publicationDate":"1992-11-01","prism:volume":"31","prism:number":"11R","prism:startingPage":"3533"},"reviewed":"false","dc:rights":["https://iopscience.iop.org/page/copyright","https://iopscience.iop.org/info/page/text-and-data-mining"],"url":[{"@id":"https://iopscience.iop.org/article/10.1143/JJAP.31.3533"},{"@id":"https://iopscience.iop.org/article/10.1143/JJAP.31.3533/pdf"}],"createdAt":"2005-02-23","modifiedAt":"2022-12-06","relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1360003446839379456","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"High-T<sub>c</sub> Phase Promoted and Stabilized in the Bi, Pb-Sr-Ca-Cu-O System"}]},{"@id":"https://cir.nii.ac.jp/crid/1360003446840037376","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Ion Irradiation Effect on Ba<sub>2</sub>YCu<sub>3</sub>O<sub>7</sub> 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