{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1360003446841925888.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1143/jjap.32.3950"}},{"identifier":{"@type":"URI","@value":"https://iopscience.iop.org/article/10.1143/JJAP.32.3950"}},{"identifier":{"@type":"URI","@value":"https://iopscience.iop.org/article/10.1143/JJAP.32.3950/pdf"}},{"identifier":{"@type":"NAID","@value":"210000033886"}}],"dc:title":[{"@value":"Lateral-Solid Phase Epitaxial Growth of Single-Crystal Al(110) Films over Striped SiO<sub>2</sub> Patterns<sup>*</sup>"}],"description":[{"type":"abstract","notation":[{"@value":"<jats:p> \n   Aluminum films deposited by the conventional DC magnetron sputtering method over striped SiO<jats:sub>2</jats:sub> patterns were single-crystallized by the lateral-solid phase epitaxial (L-SPE) growth method. Single-crystal Al(110) films deposited on striped Si(100) patterns were used as seed areas. The crystal structure of the films was investigated utilizing transmission electron microscopy (TEM), electron diffraction, X-ray diffraction (XRD) and optical microscopy. The grain density along L-SPE grown aluminum lines is influenced by the epitaxial growth direction. The result suggests the existence of anisotropy in the grain boundary energy of L-SPE grown aluminum films. \n </jats:p>"}]}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1581417128196025730","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000401635249"}],"foaf:name":[{"@value":"Koichi Kusuyama"}]},{"@id":"https://cir.nii.ac.jp/crid/1380579812272503296","@type":"Researcher","foaf:name":[{"@value":"Yasushi Nakajima Yasushi Nakajima"}]},{"@id":"https://cir.nii.ac.jp/crid/1380579812272503297","@type":"Researcher","foaf:name":[{"@value":"Yoshinori Murakami Yoshinori Murakami"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"00214922"},{"@type":"EISSN","@value":"13474065"}],"prism:publicationName":[{"@value":"Japanese Journal of Applied Physics"}],"dc:publisher":[{"@value":"IOP Publishing"}],"prism:publicationDate":"1993-09-01","prism:volume":"32","prism:number":"9R","prism:startingPage":"3950"},"reviewed":"false","dc:rights":["https://iopscience.iop.org/page/copyright","https://iopscience.iop.org/info/page/text-and-data-mining"],"url":[{"@id":"https://iopscience.iop.org/article/10.1143/JJAP.32.3950"},{"@id":"https://iopscience.iop.org/article/10.1143/JJAP.32.3950/pdf"}],"createdAt":"2005-02-23","modifiedAt":"2022-12-06","relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1050001202732287232","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Complete Planarization of via Holes with Aluminum by Selective and Nonselective Chemical Vapor Deposition"}]},{"@id":"https://cir.nii.ac.jp/crid/1360284921817833728","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Single Crystallization of Aluminum on SiO<sub>2</sub> by Thermal Annealing and Observation with Scanning µ-RHEED Microscope"}]},{"@id":"https://cir.nii.ac.jp/crid/1360284921817958912","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Growth of Single-Crystal Aluminum Films on Silicon Substrates by DC Magnetron Sputtering<sup>*</sup>"}]},{"@id":"https://cir.nii.ac.jp/crid/1360294725125977984","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Atomic resolution study of the structure and interface of aluminum films deposited epitaxially on silicon by ionized cluster beam method"}]},{"@id":"https://cir.nii.ac.jp/crid/1360298340936341504","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Formation of High Quality Pure Aluminum Films by Low Kinetic Energy Particle Bombardment"}]},{"@id":"https://cir.nii.ac.jp/crid/1360298344052795904","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Epitaxial growth of Al on Si(001) by sputtering"}]},{"@id":"https://cir.nii.ac.jp/crid/1360298345381866880","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Epitaxial growth of an Al/CaF2/Al/Si(111) structure"}]},{"@id":"https://cir.nii.ac.jp/crid/1360579817672320896","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Epitaxial growth of Al on Si by thermal evaporation in ultra-high vacuum: growth on Si(100)2 × 1 single and double domain surfaces at room temperature"}]},{"@id":"https://cir.nii.ac.jp/crid/1360579819074233984","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Temperature dependence of epitaxial growth of Al on Si(111) by chemical vapor deposition"}]},{"@id":"https://cir.nii.ac.jp/crid/1360847871770999296","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Single-Crystal Growth of Al(110) on Vicinal Si(100) in Ultra-High-Vacuum Sputtering 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