{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1360003446842331904.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1143/jjap.32.l8"}},{"identifier":{"@type":"URI","@value":"https://iopscience.iop.org/article/10.1143/JJAP.32.L8"}},{"identifier":{"@type":"URI","@value":"https://iopscience.iop.org/article/10.1143/JJAP.32.L8/pdf"}},{"identifier":{"@type":"NAID","@value":"30021861944"}},{"identifier":{"@type":"NAID","@value":"210000034978"}}],"dc:title":[{"@value":"P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting Diodes"}],"description":[{"type":"abstract","notation":[{"@value":"<jats:p> \n   P-GaN/n-InGaN/n-GaN double-heterostructure (DH) blue-light-emitting diodes (LEDs) were fabricated successfully for the first time. The output power was 125 µW and the external quantum efficiency was as high as 0.22% at a forward current of 20 mA at room temperature. The peak wavelength and the full width at half-maximum (FWHM) of the electroluminescence (EL) were 440 nm and 180 meV, respectively. This value FWHM of was the smallest ever reported for blue GaN LEDs. \n </jats:p>"}]}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1584231877962646402","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000401639625"}],"foaf:name":[{"@value":"Shuji Nakamura"}]},{"@id":"https://cir.nii.ac.jp/crid/1380013245649754240","@type":"Researcher","foaf:name":[{"@value":"Masayuki Senoh Masayuki Senoh"}]},{"@id":"https://cir.nii.ac.jp/crid/1380013245649754241","@type":"Researcher","foaf:name":[{"@value":"Takashi Mukai Takashi Mukai"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"00214922"},{"@type":"EISSN","@value":"13474065"},{"@type":"PISSN","@value":"http://id.crossref.org/issn/13474065"},{"@type":"PISSN","@value":"https://id.crossref.org/issn/13474065"},{"@type":"PISSN","@value":"https://id.crossref.org/issn/00214922"},{"@type":"PISSN","@value":"http://id.crossref.org/issn/00218979"},{"@type":"NCID","@value":"AA00690800"}],"prism:publicationName":[{"@value":"Japanese Journal of Applied Physics"}],"dc:publisher":[{"@value":"IOP Publishing"}],"prism:publicationDate":"1993-01-01","prism:volume":"32","prism:number":"1A","prism:startingPage":"L8"},"reviewed":"false","dc:rights":["https://iopscience.iop.org/page/copyright","https://iopscience.iop.org/info/page/text-and-data-mining"],"url":[{"@id":"https://iopscience.iop.org/article/10.1143/JJAP.32.L8"},{"@id":"https://iopscience.iop.org/article/10.1143/JJAP.32.L8/pdf"}],"createdAt":"2005-02-23","modifiedAt":"2022-12-06","relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1050001202112103808","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"High-Efficiency InGaN/GaN Light Emitters Based on Nanophotonics and Plasmonics"}]},{"@id":"https://cir.nii.ac.jp/crid/1050001202727472512","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Photoluminescence of InGaN films grown at high temperature by metalorganic vapor phase epitaxy"}]},{"@id":"https://cir.nii.ac.jp/crid/1050853487331594624","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Fabrication and optical characterization of GaN quasi-phase matching crystal by double polarity selective area growth in metal organic vapor phase epitaxy"}]},{"@id":"https://cir.nii.ac.jp/crid/1360003446841200256","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Hole Compensation Mechanism of P-Type GaN Films"}]},{"@id":"https://cir.nii.ac.jp/crid/1360003446855356160","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Nitride-Based Metal–Semiconductor–Metal Photodetectors with InN/GaN Multiple Nucleation Layers"}]},{"@id":"https://cir.nii.ac.jp/crid/1360003449882624512","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"High photosensitivity AlGaN/GaInN/GaN heterojunction field-effect transistor type visible photosensors"}]},{"@id":"https://cir.nii.ac.jp/crid/1360003449885391232","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Effects of a Cylindrical Cavity on the Etendue of a Light Source"}]},{"@id":"https://cir.nii.ac.jp/crid/1360003449887972736","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Investigation of Light Extraction Efficiency and Internal Quantum Efficiency in High-Power Vertical Blue Light-Emitting Diode with 3.3 W Output Power"}]},{"@id":"https://cir.nii.ac.jp/crid/1360003449889663232","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Development of high-efficiency and high-power vertical light emitting diodes"}]},{"@id":"https://cir.nii.ac.jp/crid/1360003449889665408","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"GaN transistors on Si for switching and high-frequency applications"}]},{"@id":"https://cir.nii.ac.jp/crid/1360003449889666688","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Theoretical considerations on efficiency degradation due to thermal effect in a planar GaN-based LED with a GaN substrate"}]},{"@id":"https://cir.nii.ac.jp/crid/1360003449890543360","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Direct correlations of structural and optical properties of three-dimensional GaN/InGaN core/shell micro-light emitting diodes"}]},{"@id":"https://cir.nii.ac.jp/crid/1360003449890548480","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Opportunities and challenges in GaN metal organic chemical vapor deposition for electron devices"}]},{"@id":"https://cir.nii.ac.jp/crid/1360004232262796672","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Selective area growth of GaN on trench-patterned nonpolar bulk GaN substrates"}]},{"@id":"https://cir.nii.ac.jp/crid/1360004233164674816","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Tuning of the Surface Plasmon Resonance in the UV-IR Range for Wider Applications"}]},{"@id":"https://cir.nii.ac.jp/crid/1360283696336108288","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Trapping of injection charges in emission centers of GaN:Eu red LED characterized with 1/f noise involved in forward current"}]},{"@id":"https://cir.nii.ac.jp/crid/1360284921818280192","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"High-Quality InGaN Films Grown on GaN Films"}]},{"@id":"https://cir.nii.ac.jp/crid/1360284921830362240","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Improvement of Luminous Efficiency in White Light Emitting Diodes by Reducing a Forward-bias Voltage"}]},{"@id":"https://cir.nii.ac.jp/crid/1360284924859243008","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Characterization of non-uniform InGaN alloys: spatial localization of carriers and optical properties"}]},{"@id":"https://cir.nii.ac.jp/crid/1360284924859255680","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Investigation of the electron–phonon interactions around Ga vacancies in GaN and their role in the first stage of defect reactions"}]},{"@id":"https://cir.nii.ac.jp/crid/1360284924859305856","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Temperature-dependent cathodoluminescence mapping of InGaN epitaxial layers with different In compositions"}]},{"@id":"https://cir.nii.ac.jp/crid/1360284924859574400","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Effect of electric field on formation energies of point defects around metal/SiC and metal/GaN interfaces: first-principles study"}]},{"@id":"https://cir.nii.ac.jp/crid/1360284924864165376","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Improving the Quality of GaN on Si(111) Substrate with a Medium-Temperature/High-Temperature Bilayer AlN Buffer"}]},{"@id":"https://cir.nii.ac.jp/crid/1360284924864269568","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Electrical and Optical Properties of a High-Voltage Large Area Blue Light-Emitting Diode"}]},{"@id":"https://cir.nii.ac.jp/crid/1360284924866994944","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Surface thermal stability of free-standing GaN substrates"}]},{"@id":"https://cir.nii.ac.jp/crid/1360284924867251712","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"High-photosensitivity AlGaN-based UV heterostructure-field-effect-transistor-type photosensors"}]},{"@id":"https://cir.nii.ac.jp/crid/1360285706955230720","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3"}]},{"@id":"https://cir.nii.ac.jp/crid/1360290617559160064","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Experimental studies and model analysis on potential fluctuation in InGaN quantum-well layers"}]},{"@id":"https://cir.nii.ac.jp/crid/1360290617587641088","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Highly-crystalline 6 inch free-standing GaN observed using X-ray diffraction topography"}]},{"@id":"https://cir.nii.ac.jp/crid/1360290617688198272","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Stick-and-play metasurfaces for directional light outcoupling"}]},{"@id":"https://cir.nii.ac.jp/crid/1360290617707955072","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Synthesis of CaSnN<sub>2</sub> via a High-Pressure Metathesis Reaction and the Properties of II-Sn-N<sub>2</sub> (II = Ca, Mg, Zn) Semiconductors"}]},{"@id":"https://cir.nii.ac.jp/crid/1360290617865850496","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Oxidation pathway to the titanium dioxide metasurface for harnessing photoluminescence"}]},{"@id":"https://cir.nii.ac.jp/crid/1360565167799526016","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Nobel Lecture: Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of \n<mml:math xmlns:mml=\"http://www.w3.org/1998/Math/MathML\" display=\"inline\"><mml:mi>p</mml:mi></mml:math>\n-type GaN by Mg doping followed by low-energy electron beam irradiation"}]},{"@id":"https://cir.nii.ac.jp/crid/1360566396793410944","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)"}]},{"@id":"https://cir.nii.ac.jp/crid/1360566396794447744","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Highly P-Typed Mg-Doped GaN Films Grown with GaN Buffer Layers"}]},{"@id":"https://cir.nii.ac.jp/crid/1360566396806990080","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Using Planarized p-GaN Layer to Reduce Electrostatic Discharged Damage in Nitride-Based Light-Emitting Diode"}]},{"@id":"https://cir.nii.ac.jp/crid/1360566396809617408","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"N-Polar III–Nitride Green (540 nm) Light Emitting Diode"}]},{"@id":"https://cir.nii.ac.jp/crid/1360566396810529152","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Surface Modification of GaN Substrate by Atmospheric Pressure Microplasma"}]},{"@id":"https://cir.nii.ac.jp/crid/1360567182050150016","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"A stand-alone flat-plane lighting device in a diode structure employing highly crystalline SWCNTs as field emitters"}]},{"@id":"https://cir.nii.ac.jp/crid/1360567185358947968","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Study on Surface Modification of GaN by Atmospheric Microplasma"}]},{"@id":"https://cir.nii.ac.jp/crid/1360846642036482048","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Comprehensive study on initial thermal oxidation of GaN(0001) surface and subsequent oxide growth in dry oxygen ambient"}]},{"@id":"https://cir.nii.ac.jp/crid/1360847871770022144","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Properties of Ga<sub>1-x</sub>In<sub>x</sub>N Films Prepared by MOVPE"}]},{"@id":"https://cir.nii.ac.jp/crid/1360847871770825856","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"In Situ Monitoring of GaN Growth Using Interference Effects"}]},{"@id":"https://cir.nii.ac.jp/crid/1360847871771195136","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"High-Power GaN P-N Junction Blue-Light-Emitting Diodes"}]},{"@id":"https://cir.nii.ac.jp/crid/1360847871782772864","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Ultra-High Efficiency White Light Emitting Diodes"}]},{"@id":"https://cir.nii.ac.jp/crid/1360847874815078272","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"N-Polar III–Nitride Green (540 nm) Light Emitting Diode"}]},{"@id":"https://cir.nii.ac.jp/crid/1360847874821407616","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"First-principles calculation of electron–phonon coupling at a Ga vacancy in GaN"}]},{"@id":"https://cir.nii.ac.jp/crid/1360847874821501824","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Structural study of GaN grown on nonpolar bulk GaN substrates with trench patterns"}]},{"@id":"https://cir.nii.ac.jp/crid/1360848654811533696","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Deep‐Ultraviolet Biomolecular Imaging and Analysis"}]},{"@id":"https://cir.nii.ac.jp/crid/1360853567832442624","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Heavily Si-doped pulsed sputtering deposited GaN for tunneling junction contacts in UV-A light emitting diodes"}]},{"@id":"https://cir.nii.ac.jp/crid/1361412896213519616","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Light Conversion Efficiency of Emitters on Top of Plasmonic and Dielectric Arrays of Nanoparticles"}]},{"@id":"https://cir.nii.ac.jp/crid/1361699995421154304","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Blue-green laser diodes"}]},{"@id":"https://cir.nii.ac.jp/crid/1362544419324978048","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE"}]},{"@id":"https://cir.nii.ac.jp/crid/1363107368885255680","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Blue and green diode lasers in ZnSe-based quantum wells"}]},{"@id":"https://cir.nii.ac.jp/crid/1363107370162930048","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer"}]},{"@id":"https://cir.nii.ac.jp/crid/1363107370470412288","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Room temperature blue light emitting <i>p</i>-<i>n</i> diodes from Zn(S,Se)-based multiple quantum well structures"}]},{"@id":"https://cir.nii.ac.jp/crid/1363388845892161920","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Novel metalorganic chemical vapor deposition system for GaN growth"}]},{"@id":"https://cir.nii.ac.jp/crid/1390001204118661632","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"ja","@value":"ＬＥＤ照明と表面技術　　プラズモニクスによる高効率発光"},{"@language":"en","@value":"High Efficiency Light-Emission Using Plasmonics"},{"@value":"プラズモニクスによる高効率発光"},{"@language":"ja-Kana","@value":"プラズモニクス ニ ヨル コウコウリツ ハッコウ"}]},{"@id":"https://cir.nii.ac.jp/crid/1390001204377485056","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Nitrogen Adsorption of Si(100) Surface by Plasma Excited Ammonia"}]},{"@id":"https://cir.nii.ac.jp/crid/1390001205526738048","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Theoretical Study on Intra-Cavity Distributed-Bragg-Reflection Quasi-Phase-Matched Second-Harmonic 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OSSREF","@value":"10.1143/jjap.44.7191_references_DOI_4J7Z8zbC1ZNJ0Q5QtXq1tcGOWMe"},{"@type":"CROSSREF","@value":"10.1143/jjap.33.6443_references_DOI_4J7Z8zbC1ZNJ0Q5QtXq1tcGOWMe"},{"@type":"CROSSREF","@value":"10.1143/jjap.44.7285_references_DOI_4J7Z8zbC1ZNJ0Q5QtXq1tcGOWMe"},{"@type":"CROSSREF","@value":"10.1143/jjap.45.l1084_references_DOI_4J7Z8zbC1ZNJ0Q5QtXq1tcGOWMe"},{"@type":"CROSSREF","@value":"10.1063/1.4974458_references_DOI_4J7Z8zbC1ZNJ0Q5QtXq1tcGOWMe"},{"@type":"CROSSREF","@value":"10.1002/adom.201801099_references_DOI_4J7Z8zbC1ZNJ0Q5QtXq1tcGOWMe"},{"@type":"CROSSREF","@value":"10.1143/jjap.51.022603_references_DOI_4J7Z8zbC1ZNJ0Q5QtXq1tcGOWMe"},{"@type":"CROSSREF","@value":"10.7567/1347-4065/ab06ba_references_DOI_4J7Z8zbC1ZNJ0Q5QtXq1tcGOWMe"},{"@type":"CROSSREF","@value":"10.7567/1347-4065/ab0f20_references_DOI_4J7Z8zbC1ZNJ0Q5QtXq1tcGOWMe"},{"@type":"CROSSREF","@value":"10.7567/apex.6.092104_references_DOI_4J7Z8zbC1ZNJ0Q5QtXq1tcGOWMe"},{"@type":"CROSSREF","@value":"10.7567/jjap.51.022603_references_DOI_4J7Z8zbC1ZNJ0Q5QtXq1tcGOWMe"},{"@type":"CROSSREF","@value":"10.2109/jcersj2.118.758_references_DOI_4J7Z8zbC1ZNJ0Q5QtXq1tcGOWMe"},{"@type":"CROSSREF","@value":"10.1063/5.0040500_references_DOI_4J7Z8zbC1ZNJ0Q5QtXq1tcGOWMe"},{"@type":"CROSSREF","@value":"10.2480/agrmet.d-21-00040_references_DOI_4J7Z8zbC1ZNJ0Q5QtXq1tcGOWMe"},{"@type":"CROSSREF","@value":"10.1143/jjap.38.3976_references_DOI_4J7Z8zbC1ZNJ0Q5QtXq1tcGOWMe"},{"@type":"CROSSREF","@value":"10.1143/jjap.34.4085_references_DOI_4J7Z8zbC1ZNJ0Q5QtXq1tcGOWMe"},{"@type":"CROSSREF","@value":"10.1109/tia.2013.2261973_references_DOI_4J7Z8zbC1ZNJ0Q5QtXq1tcGOWMe"},{"@type":"CROSSREF","@value":"10.7567/jjap.55.05fj09_references_DOI_4J7Z8zbC1ZNJ0Q5QtXq1tcGOWMe"},{"@type":"CROSSREF","@value":"10.7567/jjap.55.05fk04_references_DOI_4J7Z8zbC1ZNJ0Q5QtXq1tcGOWMe"},{"@type":"CROSSREF","@value":"10.1143/jjap.43.l1140_references_DOI_4J7Z8zbC1ZNJ0Q5QtXq1tcGOWMe"},{"@type":"CROSSREF","@value":"10.1149/2.0202001jss_references_DOI_4J7Z8zbC1ZNJ0Q5QtXq1tcGOWMe"},{"@type":"CROSSREF","@value":"10.1380/jsssj.29.344_references_DOI_4J7Z8zbC1ZNJ0Q5QtXq1tcGOWMe"}]}