Evaluation of Anisotropic Strain Relaxation in Strained Silicon-on-Insulator Nanostructure by Oil-Immersion Raman Spectroscopy

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Published
2012-02-01
Resource Type
journal article
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  • https://iopscience.iop.org/page/copyright
  • https://iopscience.iop.org/info/page/text-and-data-mining
DOI
  • 10.1143/jjap.51.02ba03
  • 10.7567/jjap.51.02ba03
Publisher
IOP Publishing

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<jats:p> Precise stress measurements have been desired in order to apply strained Si substrates to next-generation transistors. Oil-immersion Raman spectroscopy enables the evaluation of the anisotropic stress state in the strained Si layer of the strained Si substrate even under (001)-oriented Si backscattering geometry. First, we found that the phonon deformation potentials (PDPs) reported by Anastassakis <jats:italic>et al.</jats:italic> in 1990 was the most valid among the three sets of PDP previous reported. Using these PDPs, the precise Raman measurements of biaxial stress in strained Si-on-insulator (SSOI) nanostructures were performed. The biaxial stresses σ<jats:sub> <jats:italic>x</jats:italic> <jats:italic>x</jats:italic> </jats:sub> and σ<jats:sub> <jats:italic>y</jats:italic> <jats:italic>y</jats:italic> </jats:sub> decreased with the decrease in SSOI width and length, which was consistent with the finite element method calculation. </jats:p>

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