{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1360003449884279168.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.7567/apex.7.114103"}},{"identifier":{"@type":"URI","@value":"http://stacks.iop.org/1882-0786/7/i=11/a=114103/pdf"}},{"identifier":{"@type":"URI","@value":"http://stacks.iop.org/1882-0786/7/i=11/a=114103?key=crossref.d56f4338a50b343724b1397db93fa1a6"}},{"identifier":{"@type":"NAID","@value":"210000137300"}}],"dc:title":[{"@value":"Highly stable fluorine-passivated In–Ga–Zn–O thin-film transistors under positive gate bias and temperature stress"}],"description":[{"notation":[{"@value":"A highly stable fluorine-passivated In–Ga–Zn–O (IGZO) thin-film transistor (TFT) was demonstrated under positive gate bias and temperature stress (PBTS). The defects in the IGZO TFT were passivated by fluorine, which was introduced into a SiOx etching stopper during the deposition of fluorinated silicon nitride for passivation and diffused during post-fabrication annealing. From the results of secondary ion mass spectrometry analysis, the reliability of the IGZO TFT under PBTS was observed to be markedly improved even at a stress temperature of 100 °C when fluorine diffusion was detected in the IGZO channel. The fluorine-passivated IGZO TFT has improved operation temperature and is advantageous for achieving high-performance and high-reliability oxide TFTs for next-generation displays."}]}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1580854178245076868","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000401989392"}],"foaf:name":[{"@value":"Jingxin Jiang"}]},{"@id":"https://cir.nii.ac.jp/crid/1580854178245076864","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000401989393"}],"foaf:name":[{"@value":"Tatsuya Toda"}]},{"@id":"https://cir.nii.ac.jp/crid/1380003449884279170","@type":"Researcher","foaf:name":[{"@value":"Mai Phi Hung"}]},{"@id":"https://cir.nii.ac.jp/crid/1580854178245076867","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000401989395"}],"foaf:name":[{"@value":"Dapeng Wang"}]},{"@id":"https://cir.nii.ac.jp/crid/1420282801206194176","@type":"Researcher","personIdentifier":[{"@type":"KAKEN_RESEARCHERS","@value":"20412439"},{"@type":"NRID","@value":"1000020412439"},{"@type":"NRID","@value":"9000237909305"},{"@type":"NRID","@value":"9000237909248"},{"@type":"NRID","@value":"9000252980916"},{"@type":"NRID","@value":"9000401630286"},{"@type":"NRID","@value":"9000401717512"},{"@type":"NRID","@value":"9000399575907"},{"@type":"NRID","@value":"9000107316366"},{"@type":"NRID","@value":"9000024364330"},{"@type":"NRID","@value":"9000323834313"},{"@type":"NRID","@value":"9000402764595"},{"@type":"NRID","@value":"9000107361236"},{"@type":"NRID","@value":"9000025077858"},{"@type":"NRID","@value":"9000318574543"},{"@type":"NRID","@value":"9000301386452"},{"@type":"NRID","@value":"9000252966389"},{"@type":"NRID","@value":"9000401804554"},{"@type":"NRID","@value":"9000402002606"},{"@type":"NRID","@value":"9000390403750"},{"@type":"NRID","@value":"9000402764736"},{"@type":"NRID","@value":"9000237909321"},{"@type":"NRID","@value":"9000390426435"},{"@type":"NRID","@value":"9000401989396"},{"@type":"NRID","@value":"9000401785811"},{"@type":"NRID","@value":"9000001791079"},{"@type":"NRID","@value":"9000309572857"},{"@type":"NRID","@value":"9000401785762"},{"@type":"NRID","@value":"9000017428973"},{"@type":"NRID","@value":"9000318574557"},{"@type":"NRID","@value":"9000401802540"},{"@type":"NRID","@value":"9000401610379"},{"@type":"NRID","@value":"9000025089023"},{"@type":"NRID","@value":"9000023366225"},{"@type":"NRID","@value":"9000402020998"},{"@type":"NRID","@value":"9000283573677"},{"@type":"NRID","@value":"9000323834265"},{"@type":"NRID","@value":"9000323835590"},{"@type":"NRID","@value":"9000025068655"},{"@type":"NRID","@value":"9000107333918"},{"@type":"NRID","@value":"9000024132470"},{"@type":"NRID","@value":"9000402005362"},{"@type":"NRID","@value":"9000402003404"},{"@type":"NRID","@value":"9000291612615"},{"@type":"NRID","@value":"9000001036448"},{"@type":"NRID","@value":"9000237909325"},{"@type":"NRID","@value":"9000280546403"},{"@type":"NRID","@value":"9000401609648"},{"@type":"NRID","@value":"9000402436960"},{"@type":"NRID","@value":"9000323835624"},{"@type":"NRID","@value":"9000399578338"},{"@type":"NRID","@value":"9000390404007"},{"@type":"NRID","@value":"9000019103491"},{"@type":"NRID","@value":"9000392695775"},{"@type":"NRID","@value":"9000402013015"},{"@type":"NRID","@value":"9000401795261"},{"@type":"NRID","@value":"9000401983495"},{"@type":"NRID","@value":"9000401977011"},{"@type":"NRID","@value":"9000390403792"},{"@type":"NRID","@value":"9000241753041"},{"@type":"NRID","@value":"9000392701295"},{"@type":"NRID","@value":"9000392717256"},{"@type":"NRID","@value":"9000023789954"},{"@type":"NRID","@value":"9000242081029"},{"@type":"NRID","@value":"9000401992413"},{"@type":"NRID","@value":"9000404509764"},{"@type":"NRID","@value":"9000414568412"},{"@type":"NRID","@value":"9000078053137"},{"@type":"NRID","@value":"9000024165826"},{"@type":"NRID","@value":"9000023772814"},{"@type":"NRID","@value":"9000283716413"},{"@type":"NRID","@value":"9000402005474"},{"@type":"NRID","@value":"9000401996136"},{"@type":"NRID","@value":"9000390404044"},{"@type":"NRID","@value":"9000252965423"},{"@type":"NRID","@value":"9000402005416"},{"@type":"NRID","@value":"9000401809562"},{"@type":"NRID","@value":"9000402493144"},{"@type":"NRID","@value":"9000258168070"},{"@type":"NRID","@value":"9000025011939"},{"@type":"NRID","@value":"9000025117608"},{"@type":"NRID","@value":"9000248238025"},{"@type":"NRID","@value":"9000402050460"},{"@type":"NRID","@value":"9000401804500"},{"@type":"NRID","@value":"9000291613200"},{"@type":"NRID","@value":"9000399576513"},{"@type":"RESEARCHMAP","@value":"https://researchmap.jp/M_Furuta0208418"}],"foaf:name":[{"@value":"Mamoru Furuta"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"18820778"},{"@type":"EISSN","@value":"18820786"},{"@type":"PISSN","@value":"https://id.crossref.org/issn/18820786"}],"prism:publicationName":[{"@value":"Applied Physics Express"}],"dc:publisher":[{"@value":"IOP Publishing"}],"prism:publicationDate":"2014-11-01","prism:volume":"7","prism:number":"11","prism:startingPage":"114103"},"reviewed":"false","dc:rights":["http://iopscience.iop.org/info/page/text-and-data-mining","http://iopscience.iop.org/page/copyright"],"url":[{"@id":"http://stacks.iop.org/1882-0786/7/i=11/a=114103/pdf"},{"@id":"http://stacks.iop.org/1882-0786/7/i=11/a=114103?key=crossref.d56f4338a50b343724b1397db93fa1a6"}],"createdAt":"2014-11-07","modifiedAt":"2020-05-31","relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1050001201679165056","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["references"],"jpcoar:relatedTitle":[{"@language":"ja","@value":"Effects of chemical stoichiometry of channel region on bias instability in ZnO thin-film transistors"}]},{"@id":"https://cir.nii.ac.jp/crid/1050282676662509312","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["references"],"jpcoar:relatedTitle":[{"@language":"ja","@value":"Analysis of Hump Characteristics in Thin-Film Transistors with ZnO Channels Deposited by Sputtering at Various Oxygen Partial Pressures"}]},{"@id":"https://cir.nii.ac.jp/crid/1360011144665532032","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Segregation and defect termination of fluorine at SiO2/Si interfaces"}]},{"@id":"https://cir.nii.ac.jp/crid/1360284924859159680","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Tungsten/In–Sn–O stacked source/drain electrode structure of In–Ga–Zn–O thin-film transistor for low-contact resistance and suppressing channel shortening effect"}]},{"@id":"https://cir.nii.ac.jp/crid/1360285710377561856","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Quantitative Analysis of the Effect of Hydrogen Diffusion from Silicon Oxide Etch-Stopper Layer into Amorphous In–Ga–Zn–O on Thin-Film Transistor"}]},{"@id":"https://cir.nii.ac.jp/crid/1360285711289030912","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Effect of Fluorine in a Gate Insulator on the Reliability of Indium-Gallium-Zinc Oxide Thin-Film Transistors"}]},{"@id":"https://cir.nii.ac.jp/crid/1360290617812067968","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Influence of adsorbed oxygen concentration on characteristics of carbon-doped indium oxide thin-film transistors under bias stress"}]},{"@id":"https://cir.nii.ac.jp/crid/1360565168600375424","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"The Influence of Fluorinated Silicon Nitride Gate Insulator on Positive Bias Stability toward Highly Reliable Amorphous InGaZnO Thin-Film Transistors"}]},{"@id":"https://cir.nii.ac.jp/crid/1360566399845224704","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Correlation between passivation film density and reliability of In–Ga–Zn–O thin-film transistors"}]},{"@id":"https://cir.nii.ac.jp/crid/1360567185277975424","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"High-Performance Top-Gate and Self-Aligned In–Ga–Zn-O Thin-Film Transistor Using Coatable Organic Insulators Fabricated at 150 °C"}]},{"@id":"https://cir.nii.ac.jp/crid/1360567186265435136","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Suppression of Negative Gate Bias and Illumination Stress Degradation by Fluorine-Passivated In-Ga-Zn-O Thin-Film Transistors"}]},{"@id":"https://cir.nii.ac.jp/crid/1360568470349681664","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Influence of Deposition Temperature and Source Gas in PE-CVD for SiO<sub>2</sub> Passivation on Performance and Reliability of In–Ga–Zn–O Thin-Film Transistors"}]},{"@id":"https://cir.nii.ac.jp/crid/1360574096251209472","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Bottom-Gate Zinc Oxide Thin-Film Transistors (ZnO TFTs) for AM-LCDs"}]},{"@id":"https://cir.nii.ac.jp/crid/1360846643576852608","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Carrier Generation Mechanism and Origin of Subgap States in Ar- and He-Plasma-Treated In–Ga–Zn–O Thin Films"}]},{"@id":"https://cir.nii.ac.jp/crid/1360853567764207616","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Comparison of characteristics of thin-film transistor with In\n                    <sub>2</sub>\n                    O\n                    <sub>3</sub>\n                    and carbon-doped In\n                    <sub>2</sub>\n                    O\n                    <sub>3</sub>\n                    channels by atomic layer deposition and post-metallization annealing in O\n                    <sub>3</sub>"}]},{"@id":"https://cir.nii.ac.jp/crid/1360855569574500224","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Hydrogenated IGZO Thin-Film Transistors Using High-Pressure Hydrogen Annealing"}]},{"@id":"https://cir.nii.ac.jp/crid/1361418518762331136","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Characteristics of Thin-Film Transistors Fabricated on Fluorinated Zinc Oxide"}]},{"@id":"https://cir.nii.ac.jp/crid/1361418520444831232","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Hydrogen as a Cause of Doping in Zinc Oxide"}]},{"@id":"https://cir.nii.ac.jp/crid/1361699996418602880","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Fluorinated InGaZnO Thin-Film Transistor With HfLaO Gate Dielectric"}]},{"@id":"https://cir.nii.ac.jp/crid/1361981468568692736","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Characteristics of Plasma-Fluorinated Zinc Oxide Thin-Film Transistors"}]},{"@id":"https://cir.nii.ac.jp/crid/1361981470409175168","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Origins of threshold voltage shifts in room-temperature deposited and annealed a-In–Ga–Zn–O thin-film transistors"}]},{"@id":"https://cir.nii.ac.jp/crid/1362262944201878016","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors"}]},{"@id":"https://cir.nii.ac.jp/crid/1362544418576370304","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Review paper: Transparent amorphous oxide semiconductor thin film transistor"}]},{"@id":"https://cir.nii.ac.jp/crid/1362544420046353024","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Effects of low-temperature ozone annealing on operation characteristics of amorphous In–Ga–Zn–O thin-film transistors"}]},{"@id":"https://cir.nii.ac.jp/crid/1362825893347575424","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors"}]},{"@id":"https://cir.nii.ac.jp/crid/1362825893560385280","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Effects of high‐pressure H<sub>2</sub>O‐annealing on amorphous IGZO thin‐film transistors"}]},{"@id":"https://cir.nii.ac.jp/crid/1362825896218146944","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Passivation of (111) Si/SiO2 interface by fluorine"}]},{"@id":"https://cir.nii.ac.jp/crid/1363388843779111808","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Solution-Processed Flexible Fluorine-doped Indium Zinc Oxide Thin-Film Transistors Fabricated on Plastic Film at Low Temperature"}]},{"@id":"https://cir.nii.ac.jp/crid/1364233268664035456","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors"}]},{"@id":"https://cir.nii.ac.jp/crid/1364233269840490496","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Hydrogen passivation of electron trap in amorphous In-Ga-Zn-O thin-film transistors"}]}],"dataSourceIdentifier":[{"@type":"CROSSREF","@value":"10.7567/apex.7.114103"},{"@type":"CIA","@value":"210000137300"},{"@type":"OPENAIRE","@value":"doi_dedup___::de9cb4ec4d86efde350c65a74fe9acd4"},{"@type":"CROSSREF","@value":"10.1109/led.2016.2582319_references_DOI_SwFKWZdBJVj0A7ODfSPsCwdTUM6"},{"@type":"CROSSREF","@value":"10.1149/2.0241605jss_references_DOI_SwFKWZdBJVj0A7ODfSPsCwdTUM6"},{"@type":"CROSSREF","@value":"10.7567/1347-4065/aafd97_references_DOI_SwFKWZdBJVj0A7ODfSPsCwdTUM6"},{"@type":"CROSSREF","@value":"10.35848/1347-4065/abe685_references_DOI_SwFKWZdBJVj0A7ODfSPsCwdTUM6"},{"@type":"CROSSREF","@value":"10.1149/2.0131603jss_references_DOI_SwFKWZdBJVj0A7ODfSPsCwdTUM6"},{"@type":"CROSSREF","@value":"10.1149/2.0031709jss_references_DOI_SwFKWZdBJVj0A7ODfSPsCwdTUM6"},{"@type":"CROSSREF","@value":"10.7567/jjap.57.088001_references_DOI_SwFKWZdBJVj0A7ODfSPsCwdTUM6"},{"@type":"CROSSREF","@value":"10.35848/1347-4065/abde54_references_DOI_SwFKWZdBJVj0A7ODfSPsCwdTUM6"},{"@type":"CROSSREF","@value":"10.1109/ted.2018.2841978_references_DOI_SwFKWZdBJVj0A7ODfSPsCwdTUM6"}]}