Experimental Comparisons between Tetrakis(dimethylamino)titanium Precursor-Based Atomic-Layer-Deposited and Physical-Vapor-Deposited Titanium–Nitride Gate for High-Performance Fin-Type Metal–Oxide–Semiconductor Field-Effect Transistors

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詳細情報

  • CRID
    1360003449885614336
  • NII論文ID
    210000140476
  • DOI
    10.7567/jjap.51.04da05
  • ISSN
    13474065
    00214922
  • データソース種別
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    • CiNii Articles

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