著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
Tetsuro Hayashida and Kazuhiko Endo and Yongxun Liu and Shin-ichi O'uchi and Takashi Matsukawa and Wataru Mizubayashi and Shinji Migita and Yukinori Morita and Hiroyuki Ota and Hiroki Hashiguchi and Daisuke Kosemura and Takahiro Kamei and Junichi Tsukada and Yuki Ishikawa and Hiromi Yamauchi and Atsushi Ogura and Meishoku Masahara,Experimental Comparisons between Tetrakis(dimethylamino)titanium Precursor-Based Atomic-Layer-Deposited and Physical-Vapor-Deposited Titanium–Nitride Gate for High-Performance Fin-Type Metal–Oxide–Semiconductor Field-Effect Transistors,Japanese Journal of Applied Physics,0021-4922,IOP Publishing,2012-04-01,51,4S,04DA05,https://cir.nii.ac.jp/crid/1360003449885614336,https://doi.org/10.7567/jjap.51.04da05