{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1360004233919168512.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1063/1.4967475"}},{"identifier":{"@type":"URI","@value":"https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.4967475/14487715/192405_1_online.pdf"}}],"resourceType":"学術雑誌論文(journal article)","dc:title":[{"@value":"Critical role of W deposition condition on spin-orbit torque induced magnetization switching in nanoscale W/CoFeB/MgO"}],"description":[{"type":"abstract","notation":[{"@value":"<jats:p>We study the spin-orbit torque induced magnetization switching in W/CoFeB/MgO heterostructures with W deposited under different sputtering conditions. We show that the crystal structure and resistivity of W depend on the employed sputtering conditions. Switching current of nanoscale devices is smaller while effective anisotropy field is larger for the devices with more resistive W channel deposited at lower sputtering power and higher Ar gas pressure. The effective spin Hall angle evaluated from the switching probability varies by a factor of 2–3 depending on the W resistivity controlled by the sputtering conditions.</jats:p>"}]}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1380004233919168769","@type":"Researcher","foaf:name":[{"@value":"C. Zhang"}],"jpcoar:affiliationName":[{"@value":"Tohoku University 1 Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, , 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan"}]},{"@id":"https://cir.nii.ac.jp/crid/1380004233919168771","@type":"Researcher","foaf:name":[{"@value":"S. Fukami"}],"jpcoar:affiliationName":[{"@value":"Tohoku University 1 Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, , 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan"},{"@value":"Tohoku University 2 Center for Spintronics Integrated Systems, , 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan"},{"@value":"Tohoku University 3 Center for Innovative Integrated Electronic Systems, , 468-1 Aramaki Aza Aoba, Aoba-ku, Sendai 980-0845, Japan"},{"@value":"Tohoku University 4 Center for Spintronics Research Network, , 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan"}]},{"@id":"https://cir.nii.ac.jp/crid/1380004233919168640","@type":"Researcher","foaf:name":[{"@value":"K. Watanabe"}],"jpcoar:affiliationName":[{"@value":"Tohoku University 1 Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, , 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan"}]},{"@id":"https://cir.nii.ac.jp/crid/1380004233919168513","@type":"Researcher","foaf:name":[{"@value":"A. Ohkawara"}],"jpcoar:affiliationName":[{"@value":"Tohoku University 1 Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, , 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan"}]},{"@id":"https://cir.nii.ac.jp/crid/1380004233919168514","@type":"Researcher","foaf:name":[{"@value":"S. DuttaGupta"}],"jpcoar:affiliationName":[{"@value":"Tohoku University 1 Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, , 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan"}]},{"@id":"https://cir.nii.ac.jp/crid/1380004233919168770","@type":"Researcher","foaf:name":[{"@value":"H. Sato"}],"jpcoar:affiliationName":[{"@value":"Tohoku University 2 Center for Spintronics Integrated Systems, , 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan"},{"@value":"Tohoku University 3 Center for Innovative Integrated Electronic Systems, , 468-1 Aramaki Aza Aoba, Aoba-ku, Sendai 980-0845, Japan"},{"@value":"Tohoku University 4 Center for Spintronics Research Network, , 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan"}]},{"@id":"https://cir.nii.ac.jp/crid/1380004233919168768","@type":"Researcher","foaf:name":[{"@value":"F. Matsukura"}],"jpcoar:affiliationName":[{"@value":"Tohoku University 1 Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, , 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan"},{"@value":"Tohoku University 2 Center for Spintronics Integrated Systems, , 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan"},{"@value":"Tohoku University 4 Center for Spintronics Research Network, , 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan"},{"@value":"Tohoku University 5 WPI Advanced Institute for Materials Research, , 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan"}]},{"@id":"https://cir.nii.ac.jp/crid/1380004233919168512","@type":"Researcher","foaf:name":[{"@value":"H. Ohno"}],"jpcoar:affiliationName":[{"@value":"Tohoku University 1 Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, , 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan"},{"@value":"Tohoku University 2 Center for Spintronics Integrated Systems, , 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan"},{"@value":"Tohoku University 3 Center for Innovative Integrated Electronic Systems, , 468-1 Aramaki Aza Aoba, Aoba-ku, Sendai 980-0845, Japan"},{"@value":"Tohoku University 4 Center for Spintronics Research Network, , 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan"},{"@value":"Tohoku University 5 WPI Advanced Institute for Materials Research, , 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"00036951"},{"@type":"EISSN","@value":"10773118"}],"prism:publicationName":[{"@value":"Applied Physics Letters"}],"dc:publisher":[{"@value":"AIP Publishing"}],"prism:publicationDate":"2016-11-07","prism:volume":"109","prism:number":"19","prism:startingPage":"192405"},"reviewed":"false","url":[{"@id":"https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.4967475/14487715/192405_1_online.pdf"}],"createdAt":"2016-11-08","modifiedAt":"2023-06-17","project":[{"@id":"https://cir.nii.ac.jp/crid/1040282256813102592","@type":"Project","projectIdentifier":[{"@type":"KAKEN","@value":"15J04691"},{"@type":"JGN","@value":"JP15J04691"},{"@type":"URI","@value":"https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-15J04691/"}],"notation":[{"@language":"ja","@value":"磁気トンネル接合を用いた三端子素子に関する研究"}]}],"relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1050003824911608576","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Spin-orbit torques in high-resistivity-W/CoFeB/MgO"}]},{"@id":"https://cir.nii.ac.jp/crid/1050003824911661952","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Reversal of domain wall chirality with ferromagnet thickness in W/(Co)FeB/MgO systems"}]},{"@id":"https://cir.nii.ac.jp/crid/1050285299913490432","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Time and spatial evolution of spin–orbit torque-induced magnetization switching in W/CoFeB/MgO structures with various sizes"}]},{"@id":"https://cir.nii.ac.jp/crid/1050569081226754816","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Large spin Hall effect and increase in perpendicular magnetic anisotropy in artificially synthesized amorphous W/Hf multilayer/CoFeB system"}]},{"@id":"https://cir.nii.ac.jp/crid/1050571563504133760","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Antiferromagnetic interlayer exchange coupling and large spin Hall effect in multilayer systems with Pt/Ir/Pt and Pt/Ir layers"}]},{"@id":"https://cir.nii.ac.jp/crid/1050853038492754304","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"W thickness dependence of spin Hall effect for (W/Hf)-multilayer electrode/CoFeB/MgO systems with flat and highly (100) oriented MgO layer"}]},{"@id":"https://cir.nii.ac.jp/crid/1360002217103708672","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Spin-orbit torque induced magnetization switching in nano-scale Ta/CoFeB/MgO"}]},{"@id":"https://cir.nii.ac.jp/crid/1360003449891215616","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Magnetization switching schemes for nanoscale three-terminal spintronics devices"}]},{"@id":"https://cir.nii.ac.jp/crid/1360016863429347712","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Enhancement of current to spin-current conversion and spin torque efficiencies in a synthetic antiferromagnetic layer based on a Pt/Ir/Pt spacer layer"}]},{"@id":"https://cir.nii.ac.jp/crid/1360290617633453824","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Field-free and sub-ns magnetization switching of magnetic tunnel junctions by combining spin-transfer torque and spin–orbit torque"}]},{"@id":"https://cir.nii.ac.jp/crid/1360290617877090304","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"All-optical probe of magnetization precession modulated by spin–orbit torque"}]},{"@id":"https://cir.nii.ac.jp/crid/1360565166764248320","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"A spin–orbit torque switching scheme with collinear magnetic easy axis and current configuration"}]},{"@id":"https://cir.nii.ac.jp/crid/1360565167790971904","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Spin Hall Magnetoresistance in Metallic Bilayers"}]},{"@id":"https://cir.nii.ac.jp/crid/1360566399836925568","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Scaling of anomalous Hall effect in Ta/CoFeB/MgAl<sub>2</sub>O<sub>4</sub>/Ta multilayers"}]},{"@id":"https://cir.nii.ac.jp/crid/1360566399844640512","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Spin torque efficiency of Ta, W, and Pt in metallic bilayers evaluated by harmonic Hall and spin Hall magnetoresistance measurements"}]},{"@id":"https://cir.nii.ac.jp/crid/1360568469886025600","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Spin-Pumping-Free Determination of Spin-Orbit Torque Efficiency from Spin-Torque Ferromagnetic Resonance"}]},{"@id":"https://cir.nii.ac.jp/crid/1360572092880450304","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Giant voltage-controlled modulation of spin Hall nano-oscillator damping"}]},{"@id":"https://cir.nii.ac.jp/crid/1360574094501913216","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Anomalous Hall effect"}]},{"@id":"https://cir.nii.ac.jp/crid/1360846642363229952","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Reciprocal spin Hall effects in conductors with strong spin–orbit coupling: a review"}]},{"@id":"https://cir.nii.ac.jp/crid/1360846642746509440","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Tuning the spin Hall effect of Pt from the moderately dirty to the superclean regime"}]},{"@id":"https://cir.nii.ac.jp/crid/1360846646289679744","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Annealing temperature dependence of magnetic properties of CoFeB/MgO stacks on different buffer layers"}]},{"@id":"https://cir.nii.ac.jp/crid/1360855569103443840","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Current-induced spin-orbit torque switching of perpendicularly magnetized Hf|CoFeB|MgO and Hf|CoFeB|TaOx structures"}]},{"@id":"https://cir.nii.ac.jp/crid/1360855571538721920","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Spin transfer torque devices utilizing the giant spin Hall effect of tungsten"}]},{"@id":"https://cir.nii.ac.jp/crid/1361418519690706048","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Plasma-enhanced chemical vapor deposition of β-tungsten, a metastable phase"}]},{"@id":"https://cir.nii.ac.jp/crid/1361418520059730816","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Spin-Torque Switching with the Giant Spin Hall Effect of Tantalum"}]},{"@id":"https://cir.nii.ac.jp/crid/1361699993521843328","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Beta (β) tungsten thin films: Structure, electron transport, and giant spin Hall effect"}]},{"@id":"https://cir.nii.ac.jp/crid/1361699995645773696","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Spin Hall Effects in Metals"}]},{"@id":"https://cir.nii.ac.jp/crid/1361699995970181376","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Magnetization reversal induced by in-plane current in Ta/CoFeB/MgO structures with perpendicular magnetic easy axis"}]},{"@id":"https://cir.nii.ac.jp/crid/1361699996206329984","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Giant Spin Hall Effect and Switching Induced by Spin-Transfer Torque in a<mml:math xmlns:mml=\"http://www.w3.org/1998/Math/MathML\" display=\"inline\"><mml:mrow><mml:mi mathvariant=\"normal\">W</mml:mi><mml:mo>/</mml:mo><mml:msub><mml:mrow><mml:mi>Co</mml:mi></mml:mrow><mml:mrow><mml:mn>40</mml:mn></mml:mrow></mml:msub><mml:msub><mml:mrow><mml:mi>Fe</mml:mi></mml:mrow><mml:mrow><mml:mn>40</mml:mn></mml:mrow></mml:msub><mml:msub><mml:mrow><mml:mi mathvariant=\"normal\">B</mml:mi></mml:mrow><mml:mrow><mml:mn>20</mml:mn></mml:mrow></mml:msub><mml:mo>/</mml:mo><mml:mi>MgO</mml:mi></mml:mrow></mml:math>Structure with Perpendicular Magnetic Anisotropy"}]},{"@id":"https://cir.nii.ac.jp/crid/1361981469634766848","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Influence of apparatus geometry and deposition conditions on the structure and topography of thick sputtered coatings"}]},{"@id":"https://cir.nii.ac.jp/crid/1362262945654006656","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Microstructure, growth, resistivity, and stresses in thin tungsten films deposited by rf sputtering"}]},{"@id":"https://cir.nii.ac.jp/crid/1362262946425427712","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Structure and morphology of magnetron sputtered W films studied by x-ray methods"}]},{"@id":"https://cir.nii.ac.jp/crid/1362544418566427648","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Structure and stability of sputter deposited beta-tungsten thin films"}]},{"@id":"https://cir.nii.ac.jp/crid/1362544419114586368","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Large spin Hall magnetoresistance and its correlation to the spin-orbit torque in W/CoFeB/MgO structures"}]},{"@id":"https://cir.nii.ac.jp/crid/1362544419508828288","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Spin Hall effects"}]},{"@id":"https://cir.nii.ac.jp/crid/1362825894462553728","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"The effects of argon pressure on the properties of sputtered tantalum films"}]},{"@id":"https://cir.nii.ac.jp/crid/1362825894520765056","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Observations of β-tungsten deposited by low pressure chemical vapor deposition"}]},{"@id":"https://cir.nii.ac.jp/crid/1363107368357195264","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Threshold current for switching of a perpendicular magnetic layer induced by spin Hall effect"}]},{"@id":"https://cir.nii.ac.jp/crid/1363388844095934080","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Phase transformation of thin sputter-deposited tungsten films at room temperature"}]},{"@id":"https://cir.nii.ac.jp/crid/1363388844264811648","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Magnetization switching by spin–orbit torque in an antiferromagnet–ferromagnet bilayer system"}]},{"@id":"https://cir.nii.ac.jp/crid/1363388844721456000","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Perpendicular switching of a single ferromagnetic layer induced by in-plane current injection"}]},{"@id":"https://cir.nii.ac.jp/crid/1364233268139806336","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Three terminal magnetic tunnel junction utilizing the spin Hall effect of iridium-doped copper"}]},{"@id":"https://cir.nii.ac.jp/crid/1364233268175729920","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Magnetoresistance of heavy and light metal/ferromagnet bilayers"}]},{"@id":"https://cir.nii.ac.jp/crid/1364233270022657280","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Enhanced spin–orbit torques by oxygen incorporation in tungsten films"}]},{"@id":"https://cir.nii.ac.jp/crid/1390564227334254464","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Future Spintronics Leads: Open up"},{"@language":"ja","@value":"スピントロニクスが導く未来"},{"@value":"スピントロニクスが導く未来 : IoT/AIエッジを切り拓く超省電力不揮発性COMPUTING"},{"@language":"ja-Kana","@value":"スピントロニクス ガ ミチビク ミライ : IoT/AI エッジ オ キリ ヒラク チョウショウ デンリョク フキハツセイ COMPUTING"}]}],"dataSourceIdentifier":[{"@type":"CROSSREF","@value":"10.1063/1.4967475"},{"@type":"KAKEN","@value":"PRODUCT-20876744"},{"@type":"OPENAIRE","@value":"doi_dedup___::60b44964f48f3ec0df7f5fb663aa8c5c"},{"@type":"CROSSREF","@value":"10.1063/1.5027855_references_DOI_JFPfcnfmWfIkDGWMpEAgjjtEPdw"},{"@type":"CROSSREF","@value":"10.1063/1.5084095_references_DOI_JFPfcnfmWfIkDGWMpEAgjjtEPdw"},{"@type":"CROSSREF","@value":"10.7567/apex.10.063003_references_DOI_JFPfcnfmWfIkDGWMpEAgjjtEPdw"},{"@type":"CROSSREF","@value":"10.7567/jjap.56.0802a1_references_DOI_JFPfcnfmWfIkDGWMpEAgjjtEPdw"},{"@type":"CROSSREF","@value":"10.1063/9.0000011_references_DOI_JFPfcnfmWfIkDGWMpEAgjjtEPdw"},{"@type":"CROSSREF","@value":"10.1103/physrevb.104.064439_references_DOI_JFPfcnfmWfIkDGWMpEAgjjtEPdw"},{"@type":"CROSSREF","@value":"10.1103/physrevb.105.054421_references_DOI_JFPfcnfmWfIkDGWMpEAgjjtEPdw"},{"@type":"CROSSREF","@value":"10.7567/jjap.56.0802b2_references_DOI_JFPfcnfmWfIkDGWMpEAgjjtEPdw"},{"@type":"CROSSREF","@value":"10.7567/jjap.56.0802b5_references_DOI_JFPfcnfmWfIkDGWMpEAgjjtEPdw"},{"@type":"CROSSREF","@value":"10.7567/jjap.57.04fn02_references_DOI_JFPfcnfmWfIkDGWMpEAgjjtEPdw"},{"@type":"CROSSREF","@value":"10.1063/5.0039061_references_DOI_JFPfcnfmWfIkDGWMpEAgjjtEPdw"},{"@type":"CROSSREF","@value":"10.1063/5.0020852_references_DOI_JFPfcnfmWfIkDGWMpEAgjjtEPdw"},{"@type":"CROSSREF","@value":"10.1103/physrevapplied.12.014040_references_DOI_JFPfcnfmWfIkDGWMpEAgjjtEPdw"},{"@type":"CROSSREF","@value":"10.1038/s41467-020-17833-x_references_DOI_JFPfcnfmWfIkDGWMpEAgjjtEPdw"},{"@type":"CROSSREF","@value":"10.1063/5.0002642_references_DOI_JFPfcnfmWfIkDGWMpEAgjjtEPdw"},{"@type":"CROSSREF","@value":"10.1541/ieejjournal.139.748_references_DOI_JFPfcnfmWfIkDGWMpEAgjjtEPdw"}]}