{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1360004234425580288.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1088/1361-648x/aa5e81"}},{"identifier":{"@type":"URI","@value":"http://stacks.iop.org/0953-8984/29/i=14/a=145503/pdf"}},{"identifier":{"@type":"URI","@value":"http://stacks.iop.org/0953-8984/29/i=14/a=145503?key=crossref.30d3caac98329d6b53f42ca7123d6ac1"}},{"identifier":{"@type":"PMID","@value":"28248650"}}],"resourceType":"学術雑誌論文(journal article)","dc:title":[{"@value":"Atomically modified thin interface in metal-dielectric hetero-integrated systems: control of electronic properties"}],"description":[{"notation":[{"@value":"We have performed first-principles studies of the electronic properties of Cu-diamond hetero-integrated systems, particularly placing emphasis on elucidating the effects of surface modification of diamond with H or O. It is found that the electronic properties crucially depend on the chemical compositions of the modified atomically thin interface region. The local density of states (LDOS) of the H-terminated diamond moiety near the Cu surface exhibits a clearly different distribution from that near the vacuum region, whereas the LDOS of the O-terminated diamond is almost independent of the Cu deposition. In other words, the effects of the electronic interactions between Cu and diamond on the electronic properties in the interface region are readily controlled by surface modification with only one atomic (i.e. H or O) layer. Electric field (EF) effects on the Cu-diamond systems also strongly depend on the electronic details, i.e. atomistic modification in the interface regions. In particular, at the interface between the H-terminated diamond moiety and the vacuum region, its conduction band energy is strongly affected by an applied EF much more than the valence band energy; that is, the band gap can be varied with an applied EF. The band gap variation is found to be attributed to an atomistic level difference in the spatial extension of the valence and conduction bands and thus is not explained with a macroscopic band diagram model. It has been demonstrated that the electronic properties of hetero-integrated systems are described and controlled well by carefully designing atomically thin interface regions."}]}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1380004234425580416","@type":"Researcher","foaf:name":[{"@value":"Kenji Iida"}]},{"@id":"https://cir.nii.ac.jp/crid/1380004234425580672","@type":"Researcher","foaf:name":[{"@value":"Katsuyuki Nobusada"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"09538984"},{"@type":"EISSN","@value":"1361648X"}],"prism:publicationName":[{"@value":"Journal of Physics: Condensed Matter"}],"dc:publisher":[{"@value":"IOP Publishing"}],"prism:publicationDate":"2017-03-01","prism:volume":"29","prism:number":"14","prism:startingPage":"145503"},"reviewed":"false","dc:rights":["http://iopscience.iop.org/info/page/text-and-data-mining","http://iopscience.iop.org/page/copyright"],"url":[{"@id":"http://stacks.iop.org/0953-8984/29/i=14/a=145503/pdf"},{"@id":"http://stacks.iop.org/0953-8984/29/i=14/a=145503?key=crossref.30d3caac98329d6b53f42ca7123d6ac1"}],"createdAt":"2017-03-01","modifiedAt":"2020-04-11","foaf:topic":[{"@id":"https://cir.nii.ac.jp/all?q=Condensed%20Matter%20Physics","dc:title":"Condensed Matter Physics"},{"@id":"https://cir.nii.ac.jp/all?q=General%20Materials%20Science","dc:title":"General Materials Science"}],"project":[{"@id":"https://cir.nii.ac.jp/crid/1040000782243290240","@type":"Project","projectIdentifier":[{"@type":"KAKEN","@value":"25288012"},{"@type":"JGN","@value":"JP25288012"},{"@type":"URI","@value":"https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-25288012/"}],"notation":[{"@language":"ja","@value":"光エネルギー変換のナノ光学理論と広帯域可視光応答ナノ構造体設計への展開"},{"@language":"en","@value":"Nano-optics theory of light energy conversion and its application to design of broadband visible light responsive nanostructures"}]}],"relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1360002216809193600","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Emergent phenomena at oxide interfaces"}]},{"@id":"https://cir.nii.ac.jp/crid/1360011144682860416","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Bonding and Adhesion at the SiC/Fe Interface"}]},{"@id":"https://cir.nii.ac.jp/crid/1360011144805073920","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Copper/Diamond Adhesion and Hydrogen Termination"}]},{"@id":"https://cir.nii.ac.jp/crid/1360011145508251264","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Qualitative link between work of adhesion and thermal conductance of metal/diamond interfaces"}]},{"@id":"https://cir.nii.ac.jp/crid/1360011145727534848","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Physics of Semiconductor Devices"}]},{"@id":"https://cir.nii.ac.jp/crid/1360011146444102912","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark Effect"}]},{"@id":"https://cir.nii.ac.jp/crid/1360283692814296704","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Spontaneous Polarization and Bulk Photovoltaic Effect Driven by Polar Discontinuity in \n<mml:math xmlns:mml=\"http://www.w3.org/1998/Math/MathML\" display=\"inline\"><mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi>LaFeO</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow><mml:mo>/</mml:mo><mml:msub><mml:mrow><mml:mi>SrTiO</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>\n Heterojunctions"}]},{"@id":"https://cir.nii.ac.jp/crid/1360292617915609984","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"<i>VESTA 3</i>\n                    for three-dimensional visualization of crystal, volumetric and morphology data"}]},{"@id":"https://cir.nii.ac.jp/crid/1360292618939691776","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Electronic properties and Schottky barriers at ZnO–metal interfaces from first principles"}]},{"@id":"https://cir.nii.ac.jp/crid/1360292619378681600","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Statistics of the Recombinations of Holes and Electrons"}]},{"@id":"https://cir.nii.ac.jp/crid/1360292619628848256","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"The structure and properties of metal-semiconductor interfaces"}]},{"@id":"https://cir.nii.ac.jp/crid/1360292620245709568","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Theory of Surface States"}]},{"@id":"https://cir.nii.ac.jp/crid/1360292621343988864","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"First-principles study of<mml:math xmlns:mml=\"http://www.w3.org/1998/Math/MathML\" display=\"inline\"><mml:mrow><mml:mi mathvariant=\"normal\">Zr</mml:mi><mml:msub><mml:mi mathvariant=\"normal\">O</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:mo>∕</mml:mo><mml:mi mathvariant=\"normal\">Si</mml:mi></mml:mrow></mml:math>interfaces: Energetics and band offsets"}]},{"@id":"https://cir.nii.ac.jp/crid/1360567183558208000","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Electric field effects on the electronic properties of the silicene–amine interface"}]},{"@id":"https://cir.nii.ac.jp/crid/1360567183863713920","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Electronic states of NO2-exposed H-terminated diamond/Al2O3 heterointerface studied by synchrotron radiation photoemission and X-ray absorption spectroscopy"}]},{"@id":"https://cir.nii.ac.jp/crid/1360574095059216768","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Surface States and Rectification at a Metal Semi-Conductor Contact"}]},{"@id":"https://cir.nii.ac.jp/crid/1360574095059923200","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"First-principles calculation of capacitance including interfacial effects"}]},{"@id":"https://cir.nii.ac.jp/crid/1360574095221344896","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Structure, stability, and electronic properties of<mml:math xmlns:mml=\"http://www.w3.org/1998/Math/MathML\" display=\"inline\"><mml:mrow><mml:mi mathvariant=\"normal\">Sr</mml:mi><mml:mi mathvariant=\"normal\">Ti</mml:mi><mml:msub><mml:mi mathvariant=\"normal\">O</mml:mi><mml:mn>3</mml:mn></mml:msub><mml:mo>∕</mml:mo><mml:mi mathvariant=\"normal\">La</mml:mi><mml:mi mathvariant=\"normal\">Al</mml:mi><mml:msub><mml:mi mathvariant=\"normal\">O</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math>and<mml:math xmlns:mml=\"http://www.w3.org/1998/Math/MathML\" display=\"inline\"><mml:mrow><mml:mi mathvariant=\"normal\">Sr</mml:mi><mml:mi mathvariant=\"normal\">Ti</mml:mi><mml:msub><mml:mi mathvariant=\"normal\">O</mml:mi><mml:mn>3</mml:mn></mml:msub><mml:mo>∕</mml:mo><mml:mi mathvariant=\"normal\">Sr</mml:mi><mml:mi mathvariant=\"normal\">Ru</mml:mi><mml:msub><mml:mi mathvariant=\"normal\">O</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math>interfaces"}]},{"@id":"https://cir.nii.ac.jp/crid/1360574095964297216","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Relaxor Superlattices: Artificial Control of the Ordered–Disordered State of B-Site Ions in Perovskites"}]},{"@id":"https://cir.nii.ac.jp/crid/1360574096361010944","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Interface structure and mechanics between graphene and metal substrates: a first-principles study"}]},{"@id":"https://cir.nii.ac.jp/crid/1360855569076970624","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Theoretical interpretation of Schottky barriers and ohmic contacts"}]},{"@id":"https://cir.nii.ac.jp/crid/1360855570413704832","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Influence of interfacial hydrogen and oxygen on the Schottky barrier height of nickel on (111) and (100) diamond surfaces"}]},{"@id":"https://cir.nii.ac.jp/crid/1360855570884706176","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Dipole correction for surface supercell calculations"}]},{"@id":"https://cir.nii.ac.jp/crid/1360855571261824256","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Electronic properties of H-terminated diamond during NO2 and O3 adsorption and desorption"}]},{"@id":"https://cir.nii.ac.jp/crid/1361137043819018240","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Comparison of DFT Methods for Molecular Orbital Eigenvalue Calculations"}]},{"@id":"https://cir.nii.ac.jp/crid/1361418519331551488","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Interface state recombination in organic solar cells"}]},{"@id":"https://cir.nii.ac.jp/crid/1361418519805058560","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Half-Metallic<mml:math xmlns:mml=\"http://www.w3.org/1998/Math/MathML\" display=\"inline\"><mml:mi>p</mml:mi></mml:math>-Type<mml:math xmlns:mml=\"http://www.w3.org/1998/Math/MathML\" display=\"inline\"><mml:mrow><mml:msub><mml:mrow><mml:mi>LaAlO</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub><mml:mo>/</mml:mo><mml:msub><mml:mrow><mml:mi>EuTiO</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>Heterointerface from Density-Functional Theory"}]},{"@id":"https://cir.nii.ac.jp/crid/1361418519863644032","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"First-principles simulations of metal-ceramic interface adhesion: Co/WC versus Co/TiC"}]},{"@id":"https://cir.nii.ac.jp/crid/1361418520098245120","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Erratum: Atoms, molecules, solids, and surfaces: Applications of the generalized gradient approximation for exchange and correlation"}]},{"@id":"https://cir.nii.ac.jp/crid/1361418521300010624","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Retention of Electronic Conductivity in<mml:math xmlns:mml=\"http://www.w3.org/1998/Math/MathML\" display=\"inline\"><mml:mrow><mml:msub><mml:mrow><mml:mi>LaAlO</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub><mml:mo>/</mml:mo><mml:msub><mml:mrow><mml:mi>SrTiO</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>Nanostructures Using a<mml:math xmlns:mml=\"http://www.w3.org/1998/Math/MathML\" display=\"inline\"><mml:mrow><mml:msub><mml:mrow><mml:mi>SrCuO</mml:mi></mml:mrow><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:math>Capping Layer"}]},{"@id":"https://cir.nii.ac.jp/crid/1361699993460583680","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Efficient pseudopotentials for plane-wave calculations"}]},{"@id":"https://cir.nii.ac.jp/crid/1361699993608058240","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Electronic phenomena at complex oxide interfaces: insights from first principles"}]},{"@id":"https://cir.nii.ac.jp/crid/1361699994256148224","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Atomic and electronic structure of diamond (111) surfaces I. Reconstruction and hydrogen-induced de-reconstruction of the one dangling-bond surface"}]},{"@id":"https://cir.nii.ac.jp/crid/1361699994704418688","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Projection of plane-wave calculations into atomic orbitals"}]},{"@id":"https://cir.nii.ac.jp/crid/1361699994865030784","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Atoms, molecules, solids, and surfaces: Applications of the generalized gradient approximation for exchange and correlation"}]},{"@id":"https://cir.nii.ac.jp/crid/1361699994957758720","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"First-principles study of the<mml:math xmlns:mml=\"http://www.w3.org/1998/Math/MathML\" display=\"inline\"><mml:mrow><mml:msub><mml:mrow><mml:mtext>Co</mml:mtext></mml:mrow><mml:mn>2</mml:mn></mml:msub><mml:mtext>FeSi</mml:mtext><mml:mrow><mml:mo>(</mml:mo><mml:mrow><mml:mn>001</mml:mn></mml:mrow><mml:mo>)</mml:mo></mml:mrow></mml:mrow></mml:math>surface and<mml:math xmlns:mml=\"http://www.w3.org/1998/Math/MathML\" display=\"inline\"><mml:mrow><mml:msub><mml:mrow><mml:mtext>Co</mml:mtext></mml:mrow><mml:mn>2</mml:mn></mml:msub><mml:mtext>FeSi</mml:mtext><mml:mo>/</mml:mo><mml:mtext>GaAs</mml:mtext><mml:mrow><mml:mo>(</mml:mo><mml:mrow><mml:mn>001</mml:mn></mml:mrow><mml:mo>)</mml:mo></mml:mrow></mml:mrow></mml:math>interface"}]},{"@id":"https://cir.nii.ac.jp/crid/1361699995691264128","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Theoretical Study of the Thermodynamic and Kinetic Aspects of Terminated (111) Diamond Surfaces"}]},{"@id":"https://cir.nii.ac.jp/crid/1361981468824875904","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Generating relativistic pseudo-potentials with explicit incorporation of semi-core states using APE, the Atomic Pseudo-potentials Engine"}]},{"@id":"https://cir.nii.ac.jp/crid/1361981470092588672","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Enhancement/depletion MESFETs of diamond and their logic circuits"}]},{"@id":"https://cir.nii.ac.jp/crid/1361981470166453120","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"RF performance of surface channel diamond FETs with sub-micron gate length"}]},{"@id":"https://cir.nii.ac.jp/crid/1361981471021948160","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Dielectric Discontinuity at Interfaces in the Atomic-Scale Limit: Permittivity of Ultrathin Oxide Films on Silicon"}]},{"@id":"https://cir.nii.ac.jp/crid/1362262943360022272","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Theoretical Study of the Energetic Stability and Geometry of Terminated and B-Doped Diamond (111) Surfaces"}]},{"@id":"https://cir.nii.ac.jp/crid/1362262943434089728","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Charge Confinement and Doping at<mml:math xmlns:mml=\"http://www.w3.org/1998/Math/MathML\" display=\"inline\"><mml:msub><mml:mi>LaAlO</mml:mi><mml:mn>3</mml:mn></mml:msub><mml:mo>/</mml:mo><mml:msub><mml:mi>SrTiO</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:math>Interfaces"}]},{"@id":"https://cir.nii.ac.jp/crid/1362262944207157120","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials"}]},{"@id":"https://cir.nii.ac.jp/crid/1362262944299628544","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"First-principles characterization of a heteroceramic interface:<mml:math xmlns:mml=\"http://www.w3.org/1998/Math/MathML\" display=\"inline\"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant=\"normal\">ZrO</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow><mml:mn/><mml:mo>(</mml:mo><mml:mn>001</mml:mn><mml:mo>)</mml:mo><mml:mn/></mml:math>deposited on an<mml:math xmlns:mml=\"http://www.w3.org/1998/Math/MathML\" display=\"inline\"><mml:mi>α</mml:mi><mml:mo>−</mml:mo><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant=\"normal\">Al</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant=\"normal\">O</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow><mml:mo>(</mml:mo><mml:mn>11</mml:mn><mml:mn/><mml:mi>¯</mml:mi><mml:mn>0</mml:mn><mml:mn>2</mml:mn><mml:mo>)</mml:mo></mml:math>substrate"}]},{"@id":"https://cir.nii.ac.jp/crid/1362262945152813184","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Hydrogen-terminated diamond surfaces and interfaces"}]},{"@id":"https://cir.nii.ac.jp/crid/1362544418410696064","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Epitaxial Cu contacts on semiconducting diamond"}]},{"@id":"https://cir.nii.ac.jp/crid/1362544419174599936","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Enhancement of ferroelectricity at metal–oxide interfaces"}]},{"@id":"https://cir.nii.ac.jp/crid/1362544420984733312","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Direct observation of a widely tunable bandgap in bilayer graphene"}]},{"@id":"https://cir.nii.ac.jp/crid/1362544421266779264","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Generalized Gradient Approximation Made Simple"}]},{"@id":"https://cir.nii.ac.jp/crid/1362544421365902464","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Electronic structure of copper/diamond interfaces including effects of interfacial hydrogen"}]},{"@id":"https://cir.nii.ac.jp/crid/1362825893500617088","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"LaAlO3 stoichiometry is key to electron liquid formation at LaAlO3/SrTiO3 interfaces"}]},{"@id":"https://cir.nii.ac.jp/crid/1362825893946479360","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Erratum: “Time-dependent density functional methods for excited state properties” [J. Chem. Phys. <b>117</b>, 7433 (2002)]"}]},{"@id":"https://cir.nii.ac.jp/crid/1363107368670688000","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Generalized Gradient Approximation Made Simple [Phys. Rev. Lett. 77, 3865 (1996)]"}]},{"@id":"https://cir.nii.ac.jp/crid/1363107369100473728","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Enhancement of Thermal Conductance at Metal-Dielectric Interfaces Using Subnanometer Metal Adhesion Layers"}]},{"@id":"https://cir.nii.ac.jp/crid/1363107369278466048","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Electronic transport in nanometre-scale silicon-on-insulator membranes"}]},{"@id":"https://cir.nii.ac.jp/crid/1363107369339874432","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Coverage dependent work function of graphene on a Cu(111) substrate with intercalated alkali metals"}]},{"@id":"https://cir.nii.ac.jp/crid/1363388843294186112","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Effects of disorder state and interfacial layer on thermal transport in copper/diamond system"}]},{"@id":"https://cir.nii.ac.jp/crid/1363388843839266048","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"<i>Ab initio</i>calculations of the β-SiC(001)/Ti interface"}]},{"@id":"https://cir.nii.ac.jp/crid/1363388844572428800","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Whither the oxide interface"}]},{"@id":"https://cir.nii.ac.jp/crid/1363670318957672704","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Energy band gaps and lattice parameters evaluated with the Heyd-Scuseria-Ernzerhof screened hybrid functional"}]},{"@id":"https://cir.nii.ac.jp/crid/1363670319352935424","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Formation of a Positive Fixed Charge at<mml:math xmlns:mml=\"http://www.w3.org/1998/Math/MathML\" display=\"inline\"><mml:mrow><mml:mi>c</mml:mi><mml:mtext>−</mml:mtext><mml:mi>Si</mml:mi><mml:mo stretchy=\"false\">(</mml:mo><mml:mn>111</mml:mn><mml:mo stretchy=\"false\">)</mml:mo><mml:mo>/</mml:mo><mml:mi>a</mml:mi><mml:mtext>−</mml:mtext><mml:msub><mml:mrow><mml:mi>Si</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub><mml:msub><mml:mrow><mml:mi mathvariant=\"normal\">N</mml:mi></mml:mrow><mml:mrow><mml:mn>3.5</mml:mn></mml:mrow></mml:msub><mml:mo>:</mml:mo><mml:mi mathvariant=\"normal\">H</mml:mi></mml:mrow></mml:math>Interfaces"}]},{"@id":"https://cir.nii.ac.jp/crid/1363670319642684288","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Polar Discontinuity Doping of the<mml:math xmlns:mml=\"http://www.w3.org/1998/Math/MathML\" display=\"inline\"><mml:msub><mml:mi>LaVO</mml:mi><mml:mn>3</mml:mn></mml:msub><mml:mo>/</mml:mo><mml:msub><mml:mi>SrTiO</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:math>Interface"}]},{"@id":"https://cir.nii.ac.jp/crid/1363951793779697536","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Oxygen adsorption on the (1 × 1) and (2 × 1) reconstructed C(111) surfaces: a density functional theory study"}]},{"@id":"https://cir.nii.ac.jp/crid/1363951794300324480","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"The impact of ozone on the surface conductivity of single crystal diamond"}]},{"@id":"https://cir.nii.ac.jp/crid/1363951794432573696","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Removal of near-interface traps at SiO2/4H–SiC (0001) interfaces by phosphorus incorporation"}]},{"@id":"https://cir.nii.ac.jp/crid/1363951794958001024","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"The mechanisms of Schottky barrier pinning in III–V semiconductors: Criteria developed from microscopic (atomic level) and macroscopic experiments"}]},{"@id":"https://cir.nii.ac.jp/crid/1363951795246574592","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"The Interface Phase and the Schottky Barrier for a Crystalline Dielectric on Silicon"}]},{"@id":"https://cir.nii.ac.jp/crid/1363951795306050048","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Diamond–metal contacts: interface barriers and real-time characterization"}]},{"@id":"https://cir.nii.ac.jp/crid/1363951795372734592","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Atomic-scale dielectric permittivity profiles in slabs and multilayers"}]},{"@id":"https://cir.nii.ac.jp/crid/1363951795380279296","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"First-principles calculation of the band offset at<mml:math xmlns:mml=\"http://www.w3.org/1998/Math/MathML\" display=\"inline\"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant=\"normal\">B</mml:mi><mml:mi mathvariant=\"normal\">a</mml:mi><mml:mi mathvariant=\"normal\">O</mml:mi><mml:mo>/</mml:mo><mml:mi mathvariant=\"normal\">B</mml:mi><mml:mi mathvariant=\"normal\">a</mml:mi><mml:mi mathvariant=\"normal\">T</mml:mi><mml:mi mathvariant=\"normal\">i</mml:mi><mml:mi mathvariant=\"normal\">O</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>and<mml:math xmlns:mml=\"http://www.w3.org/1998/Math/MathML\" display=\"inline\"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant=\"normal\">S</mml:mi><mml:mi mathvariant=\"normal\">r</mml:mi><mml:mi mathvariant=\"normal\">O</mml:mi><mml:mo>/</mml:mo><mml:mi mathvariant=\"normal\">S</mml:mi><mml:mi mathvariant=\"normal\">r</mml:mi><mml:mi mathvariant=\"normal\">T</mml:mi><mml:mi mathvariant=\"normal\">i</mml:mi><mml:mi mathvariant=\"normal\">O</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>interfaces"}]},{"@id":"https://cir.nii.ac.jp/crid/1364233269689655808","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface"}]},{"@id":"https://cir.nii.ac.jp/crid/1364233270374420480","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Adiabatic time-dependent density functional methods for excited state properties"}]},{"@id":"https://cir.nii.ac.jp/crid/1364233270826834048","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Modulation of Conductance of Thin Films of Semi-Conductors by Surface Charges"}]},{"@id":"https://cir.nii.ac.jp/crid/1370004234425587076","@type":"Product","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Energy level alignment and interfacial electronic structures at organic/metal and organic interfaces"}]},{"@id":"https://cir.nii.ac.jp/crid/1520290883506386432","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Origin of Schottky barrier modification by hydrogen on diamond"},{"@language":"ja-Kana","@value":"Origin of Schottky barrier modification by hydrogen on diamond"}]}],"dataSourceIdentifier":[{"@type":"CROSSREF","@value":"10.1088/1361-648x/aa5e81"},{"@type":"KAKEN","@value":"PRODUCT-21001175"},{"@type":"OPENAIRE","@value":"doi_dedup___::a61b80a9e58a7ae4ac724250667c0b1d"}]}