著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
Chiaki Yokoyama and Chi-Yu Chang and Mitsuru Takenaka and Shinichi Takagi,Pretreatment Effects on High-k/In<sub>x</sub>Ga<sub>1–x</sub>As MOS Interface Properties and Their Physical Model,IEEE Journal of the Electron Devices Society,2168-6734,Institute of Electrical and Electronics Engineers (IEEE),2018,6,,487-493,https://cir.nii.ac.jp/crid/1360004235313932160,https://doi.org/10.1109/jeds.2017.2760344