{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1360011144047921408.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1063/1.323122"}},{"identifier":{"@type":"URI","@value":"https://pubs.aip.org/aip/jap/article-pdf/47/7/3248/18373499/3248_1_online.pdf"}}],"dc:title":[{"@value":"Open-circuit voltage of MIS silicon solar cells"}],"description":[{"type":"abstract","notation":[{"@value":"<jats:p>The open-circuit voltage of MIS solar cells realized on n-type silicon has been investigated. Chemically formed and evaporated SiOx layers have been used for the insulating film. The latter has given the best results on polished samples, since Voc reached 0.55V. The influence of different parameters like n or ΦBn are discussed.</jats:p>"}]}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1380011144047921409","@type":"Researcher","foaf:name":[{"@value":"J. P. Ponpon"}],"jpcoar:affiliationName":[{"@value":"Centre de Recherches Nucléaires et Université Louis Pasteur, Laboratoire de Physique des Rayonnements et d′Electronique Nucléaire, F-67037 Strasbourg Cedex, France"}]},{"@id":"https://cir.nii.ac.jp/crid/1380011144047921408","@type":"Researcher","foaf:name":[{"@value":"P. Siffert"}],"jpcoar:affiliationName":[{"@value":"Centre de Recherches Nucléaires et Université Louis Pasteur, Laboratoire de Physique des Rayonnements et d′Electronique Nucléaire, F-67037 Strasbourg Cedex, France"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"00218979"},{"@type":"EISSN","@value":"10897550"}],"prism:publicationName":[{"@value":"Journal of Applied Physics"}],"dc:publisher":[{"@value":"AIP Publishing"}],"prism:publicationDate":"1976-07-01","prism:volume":"47","prism:number":"7","prism:startingPage":"3248","prism:endingPage":"3251"},"reviewed":"false","url":[{"@id":"https://pubs.aip.org/aip/jap/article-pdf/47/7/3248/18373499/3248_1_online.pdf"}],"createdAt":"2003-02-14","modifiedAt":"2024-02-04","relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1360289848626053376","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Efficiency improvement of an mis solar cell by interface charges and surface states"}]},{"@id":"https://cir.nii.ac.jp/crid/1360566396793438720","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"A New Approach to an Efficient and Low-Cost Solid Solar Cell by Employing a Semiconductor Coated with Ultrafine Metal Islands"}]},{"@id":"https://cir.nii.ac.jp/crid/1362260173459866112","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Characterization of Si MIS solar cell"}]},{"@id":"https://cir.nii.ac.jp/crid/1390001206247950208","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Improvement of Open Circuit Voltage of SnO2-nSi Solar Cells."},{"@language":"ja-Kana","@value":"Improvement of Open Circuit Voltage of"},{"@value":"Improvement of Open Circuit Voltage of SnO<sub> 2</sub>–nSi Solar Cells"}]}],"dataSourceIdentifier":[{"@type":"CROSSREF","@value":"10.1063/1.323122"},{"@type":"CROSSREF","@value":"10.1002/eej.4391010119_references_DOI_G3SNXHJgrgwUJEmxX3RTCGbWYgX"},{"@type":"CROSSREF","@value":"10.1143/jjap.36.1083_references_DOI_G3SNXHJgrgwUJEmxX3RTCGbWYgX"},{"@type":"CROSSREF","@value":"10.1143/jjap.28.l261_references_DOI_G3SNXHJgrgwUJEmxX3RTCGbWYgX"},{"@type":"CROSSREF","@value":"10.1002/ecja.4400660814_references_DOI_G3SNXHJgrgwUJEmxX3RTCGbWYgX"}]}