{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1360011146367220992.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1016/s0022-0248(97)00289-3"}},{"identifier":{"@type":"URI","@value":"https://api.elsevier.com/content/article/PII:S0022024897002893?httpAccept=text/xml"}},{"identifier":{"@type":"URI","@value":"https://api.elsevier.com/content/article/PII:S0022024897002893?httpAccept=text/plain"}}],"dc:title":[{"@value":"Sublimation growth of 6H- and 4H-SiC single crystals in the [11¯0 0] and [1 12¯0] directions"}],"description":[{"notation":[{"@value":"Abstract   Sublimation growth of 6H- and 4H-SiC single crystals in the [1 1¯0 0] and [1 1 2¯ 0] directions has been carried out by the modified-Lely method. Transport properties of the crystals in parallel and perpendicular directions to the [0 0 0 1] basal plane were examined by van der Pauw and resistance bar measurements using 5° off-oriented [0 0 0 1] samples. Van der Pauw resistance asymmetry significantly varied (1 to ⩾ 10 3 ) depending on the growth direction and the polytype of grown crystals, and resistivity anomaly along the off-direction was found for 6H [1 1¯ 0 0] grown crystals. The crystals contained a high density (⩾ 10 4 cm −1 ) of stacking faults lying in the basal plane, which largely hinder electron transport, giving rise to the resistivity anomaly. An atomistic surface model for the stacking fault generation is proposed and the influence of the growth direction and polytype is discussed."}]}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1380011146367220992","@type":"Researcher","foaf:name":[{"@value":"Jun Takahashi"}]},{"@id":"https://cir.nii.ac.jp/crid/1380011146367220993","@type":"Researcher","foaf:name":[{"@value":"Noboru Ohtani"}]},{"@id":"https://cir.nii.ac.jp/crid/1380011146367220994","@type":"Researcher","foaf:name":[{"@value":"Masakazu Katsuno"}]},{"@id":"https://cir.nii.ac.jp/crid/1380011146367220995","@type":"Researcher","foaf:name":[{"@value":"Seiji Shinoyama"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"00220248"}],"prism:publicationName":[{"@value":"Journal of Crystal Growth"}],"dc:publisher":[{"@value":"Elsevier BV"}],"prism:publicationDate":"1997-11","prism:volume":"181","prism:number":"3","prism:startingPage":"229","prism:endingPage":"240"},"reviewed":"false","dc:rights":["https://www.elsevier.com/tdm/userlicense/1.0/"],"url":[{"@id":"https://api.elsevier.com/content/article/PII:S0022024897002893?httpAccept=text/xml"},{"@id":"https://api.elsevier.com/content/article/PII:S0022024897002893?httpAccept=text/plain"}],"createdAt":"2003-05-19","modifiedAt":"2019-04-22","relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1360003449883010688","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Theoretical analysis of photo-recycling effect on external quantum efficiency considering spatial carrier dynamics"}]},{"@id":"https://cir.nii.ac.jp/crid/1360003449890351488","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Strain energy analysis of screw 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radiation"}]},{"@id":"https://cir.nii.ac.jp/crid/1360847874819696896","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Cross-sectional observation of stacking faults in 4H-SiC by KOH etching on nonpolar $\\{ 1\\bar{1}00\\} $ face, cathodoluminescence imaging, and transmission electron microscopy"}]},{"@id":"https://cir.nii.ac.jp/crid/1361694369792860544","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Theoretical Formulation of Experimentally Observed Quantum Efficiency of Radiation in Semiconducting Crystal"}]},{"@id":"https://cir.nii.ac.jp/crid/1390001204607858304","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Recent Development on the Production Technology of Silicon Carbide Wafers"},{"@language":"ja","@value":"ＳｉＣウェハ製造に関する最近の動向"},{"@language":"ja-Kana","@value":"SiC ウェハ セイゾウ ニ カンスル サイキン ノ 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