{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1360013171533096320.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1039/d0nr03965a"}},{"identifier":{"@type":"URI","@value":"http://pubs.rsc.org/en/content/articlepdf/2020/NR/D0NR03965A"}}],"dc:title":[{"@value":"Multi-level flash memory device based on stacked anisotropic ReS<sub>2</sub>–boron nitride–graphene heterostructures"}],"description":[{"type":"abstract","notation":[{"@value":"<p>Direction-sensitive multi-level flash memory based on stacked anisotropic ReS<sub>2</sub>–boron nitride–graphene heterostructures.</p>"}]}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1380013171533096320","@type":"Researcher","foaf:name":[{"@value":"Enxiu Wu"}],"jpcoar:affiliationName":[{"@value":"State Key Laboratory of Precision Measurement Technology and Instruments"},{"@value":"School of Precision Instruments and Opto-electronics Engineering"},{"@value":"Tianjin University"},{"@value":"Tianjin"},{"@value":"China"}]},{"@id":"https://cir.nii.ac.jp/crid/1380013171533096325","@type":"Researcher","foaf:name":[{"@value":"Yuan Xie"}],"jpcoar:affiliationName":[{"@value":"State Key Laboratory of Precision Measurement Technology and Instruments"},{"@value":"School of Precision Instruments and Opto-electronics Engineering"},{"@value":"Tianjin University"},{"@value":"Tianjin"},{"@value":"China"}]},{"@id":"https://cir.nii.ac.jp/crid/1380013171533096321","@type":"Researcher","foaf:name":[{"@value":"Shijie Wang"}],"jpcoar:affiliationName":[{"@value":"State Key Laboratory of Precision Measurement Technology and Instruments"},{"@value":"School of Precision Instruments and Opto-electronics Engineering"},{"@value":"Tianjin University"},{"@value":"Tianjin"},{"@value":"China"}]},{"@id":"https://cir.nii.ac.jp/crid/1380013171533096323","@type":"Researcher","foaf:name":[{"@value":"Daihua Zhang"}],"jpcoar:affiliationName":[{"@value":"State Key Laboratory of Precision Measurement Technology and Instruments"},{"@value":"School of Precision Instruments and Opto-electronics Engineering"},{"@value":"Tianjin University"},{"@value":"Tianjin"},{"@value":"China"}]},{"@id":"https://cir.nii.ac.jp/crid/1380013171533096324","@type":"Researcher","foaf:name":[{"@value":"Xiaodong Hu"}],"jpcoar:affiliationName":[{"@value":"State Key Laboratory of Precision Measurement Technology and Instruments"},{"@value":"School of Precision Instruments and Opto-electronics Engineering"},{"@value":"Tianjin University"},{"@value":"Tianjin"},{"@value":"China"}]},{"@id":"https://cir.nii.ac.jp/crid/1380013171533096322","@type":"Researcher","foaf:name":[{"@value":"Jing Liu"}],"jpcoar:affiliationName":[{"@value":"State Key Laboratory of Precision Measurement Technology and Instruments"},{"@value":"School of Precision Instruments and Opto-electronics Engineering"},{"@value":"Tianjin University"},{"@value":"Tianjin"},{"@value":"China"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"20403364"},{"@type":"EISSN","@value":"20403372"}],"prism:publicationName":[{"@value":"Nanoscale"}],"dc:publisher":[{"@value":"Royal Society of Chemistry (RSC)"}],"prism:publicationDate":"2020","prism:volume":"12","prism:number":"36","prism:startingPage":"18800","prism:endingPage":"18806"},"reviewed":"false","dc:rights":["http://rsc.li/journals-terms-of-use"],"url":[{"@id":"http://pubs.rsc.org/en/content/articlepdf/2020/NR/D0NR03965A"}],"createdAt":"2020-08-13","modifiedAt":"2024-04-17","relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1360294643752207488","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Material and Device Structure Designs for 2D Memory Devices Based on the Floating Gate Voltage Trajectory"}]}],"dataSourceIdentifier":[{"@type":"CROSSREF","@value":"10.1039/d0nr03965a"},{"@type":"CROSSREF","@value":"10.1021/acsnano.0c10005_references_DOI_Y5ruwBoXfKraq5aN6CZSt4FLfx4"}]}