{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1360016865691579264.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1557/proc-102-295"}},{"identifier":{"@type":"URI","@value":"https://www.cambridge.org/core/services/aop-cambridge-core/content/view/S1946427400538949"}}],"dc:title":[{"@value":"Oxidation of Strained Si-Ge Layers Grown by MBE"}],"description":[{"type":"abstract","notation":[{"@value":"<jats:title>ABSTRACT</jats:title><jats:p>The oxidation of strained SiGe alloy layers grown by Molecular Beam Epitaxy (MBE) was studied. An initial fast growth regime was identified for 800°C steam oxidations, where the growth rate is 2.5 times that of silicon. The oxides formed on SiGe were found to be essentially Ge-free: Ge present in the material is rejected by the oxide, resulting in the formation of a Ge-rich epitaxial layer at the oxide/substrate interface.</jats:p>"}]}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1380016865691579264","@type":"Researcher","foaf:name":[{"@value":"G.L. Patton"}]},{"@id":"https://cir.nii.ac.jp/crid/1380016865691579268","@type":"Researcher","foaf:name":[{"@value":"S.S. Iyer"}]},{"@id":"https://cir.nii.ac.jp/crid/1380016865691579267","@type":"Researcher","foaf:name":[{"@value":"S.L. Delage"}]},{"@id":"https://cir.nii.ac.jp/crid/1380016865691579266","@type":"Researcher","foaf:name":[{"@value":"E. Ganin"}]},{"@id":"https://cir.nii.ac.jp/crid/1380016865691579265","@type":"Researcher","foaf:name":[{"@value":"R.C. Mcintosh"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"02729172"},{"@type":"EISSN","@value":"19464274"}],"prism:publicationName":[{"@value":"MRS Proceedings"}],"dc:publisher":[{"@value":"Springer Science and Business Media LLC"}],"prism:publicationDate":"1987","prism:volume":"102","prism:startingPage":"295"},"reviewed":"false","dc:rights":["https://www.cambridge.org/core/terms"],"url":[{"@id":"https://www.cambridge.org/core/services/aop-cambridge-core/content/view/S1946427400538949"}],"createdAt":"2011-03-06","modifiedAt":"2021-02-24","relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1390001206253637120","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Strained Si1-xGex Normal-Graded Channel P-Type Metal Oxide Semiconductor Field Effect Transistor."},{"@value":"Strained Si<sub>1-x</sub>Ge<sub>x</sub> Normal-Graded Channel P-Type Metal Oxide Semiconductor  Field Effect Transistor"}]},{"@id":"https://cir.nii.ac.jp/crid/1390282681223534848","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Oxidation of Ultrathin SiGe Layer on Si(001): Evidence for Inward Movement of Ge."}]}],"dataSourceIdentifier":[{"@type":"CROSSREF","@value":"10.1557/proc-102-295"},{"@type":"CROSSREF","@value":"10.1143/jjap.39.l579_references_DOI_BTaqUkw0bJtl197OLMxiw75fi3b"},{"@type":"CROSSREF","@value":"10.1143/jjap.33.1837_references_DOI_BTaqUkw0bJtl197OLMxiw75fi3b"}]}