{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1360016867698238976.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1063/1.90447"}},{"identifier":{"@type":"URI","@value":"https://pubs.aip.org/aip/apl/article-pdf/33/7/640/18437702/640_1_online.pdf"}}],"dc:title":[{"@value":"The Ga0.47In0.53As homojunction photodiode—A new avalanche photodetector in the near infrared between 1.0 and 1.6 μm"}],"description":[{"type":"abstract","notation":[{"@value":"<jats:p>A new p-n photodetector operating at room temperature and sensitive in the near infrared for wavelengths as long as 1.6 μm has been made from Ga0.47In0.53As grown lattice matched on InP substrates by LPE. These detectors display avalanche gain and dark current as low as 2×10−9 A. Measurements of the speed of response at 1.06 μm have shown a detector response time as fast as 250 psec.</jats:p>"}]}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1380016867698238976","@type":"Researcher","foaf:name":[{"@value":"T. P. Pearsall"}],"jpcoar:affiliationName":[{"@value":"Laboratoire Central de Recherches, Thomson/CSF, 91401, Orsay, France"}]},{"@id":"https://cir.nii.ac.jp/crid/1380016867698238977","@type":"Researcher","foaf:name":[{"@value":"M. Papuchon"}],"jpcoar:affiliationName":[{"@value":"Laboratoire Central de Recherches, Thomson/CSF, 91401, Orsay, France"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"00036951"},{"@type":"EISSN","@value":"10773118"}],"prism:publicationName":[{"@value":"Applied Physics Letters"}],"dc:publisher":[{"@value":"AIP Publishing"}],"prism:publicationDate":"1978-10-01","prism:volume":"33","prism:number":"7","prism:startingPage":"640","prism:endingPage":"642"},"reviewed":"false","url":[{"@id":"https://pubs.aip.org/aip/apl/article-pdf/33/7/640/18437702/640_1_online.pdf"}],"createdAt":"2003-02-13","modifiedAt":"2024-02-05","relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1360847871767541248","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Analysis of Dark Currents and Minimum Detectable Powers for InGaAsP Optical Receivers"}]},{"@id":"https://cir.nii.ac.jp/crid/1390282681225187840","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Incidence of Final States-Density for Impact Ionization on the Electron Ionization Rate."},{"@language":"ja-Kana","@value":"Incidence of Final States-Density for I"}]},{"@id":"https://cir.nii.ac.jp/crid/1390282681232880000","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Planar In0.53Ga0.47As avalanche photodiodes with guard-ring structure."},{"@value":"Planar In<sub>0.53</sub>Ga<sub>0.47</sub>As Avalanche Photodiodes with Guard-Ring Structure"}]},{"@id":"https://cir.nii.ac.jp/crid/1390282681232960640","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Tunneling current in InGaAs and optimum design for InGaAs/InP avalanche photodiode."}]}],"dataSourceIdentifier":[{"@type":"CROSSREF","@value":"10.1063/1.90447"},{"@type":"CROSSREF","@value":"10.1143/jjap.37.5880_references_DOI_2egnWShX2v2bG7gpHJT6AB4Jexb"},{"@type":"CROSSREF","@value":"10.1143/jjap.19.1441_references_DOI_2egnWShX2v2bG7gpHJT6AB4Jexb"},{"@type":"CROSSREF","@value":"10.1143/jjap.20.1915_references_DOI_2egnWShX2v2bG7gpHJT6AB4Jexb"},{"@type":"CROSSREF","@value":"10.1143/jjap.19.l277_references_DOI_2egnWShX2v2bG7gpHJT6AB4Jexb"}]}