{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1360016869817524992.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1109/iedm19573.2019.8993540"}},{"identifier":{"@type":"URI","@value":"http://xplorestaging.ieee.org/ielx7/8971803/8993428/08993540.pdf?arnumber=8993540"}}],"dc:title":[{"@value":"Millimeter-wave InP Device Technologies for Ultra-high Speed Wireless Communications toward Beyond 5G"}],"description":[{"notation":[{"@value":"We present a 300-GHz wireless transceiver (TRx) that can support a data rate of more than 100 Gb/s based on an InP-based high electron mobility transistor (InP-HEMT), for the era of \"Beyond 5G\". Special device technologies, such as the backside DC line technique and low loss monolithic microwave integrated circuit (MMIC) to waveguide transition technique, for implementing MMICs at very high frequencies have been introduced. The building blocks of our TRx, i.e., amplifiers and a mixer, were fabricated based on these techniques and showed superior performance. We successfully demonstrated 100-Gb/s wireless data transmission using our TRx at a link distance of 2.2 m. We also achieved 300 GHz, 120 Gb/s, 9.8-m wireless data transmission by applying our fabricated high-linearity PAs to our TRx. To the authors’ knowledge, These are the world highest data rates achieved with electronic-device-based 300-GHz TRx."}]}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1380016869817525001","@type":"Researcher","foaf:name":[{"@value":"H. Hamada"}],"jpcoar:affiliationName":[{"@value":"NTT Device Technology Labs, NTT Corporation,Atsugi-shi,Kanagawa,Japan"}]},{"@id":"https://cir.nii.ac.jp/crid/1380016869817524995","@type":"Researcher","foaf:name":[{"@value":"T. Tsutsumi"}],"jpcoar:affiliationName":[{"@value":"NTT Device Technology Labs, NTT Corporation,Atsugi-shi,Kanagawa,Japan"}]},{"@id":"https://cir.nii.ac.jp/crid/1380016869817524993","@type":"Researcher","foaf:name":[{"@value":"H. Sugiyama"}],"jpcoar:affiliationName":[{"@value":"NTT Device Technology Labs, NTT Corporation,Atsugi-shi,Kanagawa,Japan"}]},{"@id":"https://cir.nii.ac.jp/crid/1380016869817525000","@type":"Researcher","foaf:name":[{"@value":"H. Matsuzaki"}],"jpcoar:affiliationName":[{"@value":"NTT Device Technology Labs, NTT Corporation,Atsugi-shi,Kanagawa,Japan"}]},{"@id":"https://cir.nii.ac.jp/crid/1380016869817524996","@type":"Researcher","foaf:name":[{"@value":"H.-J. Song"}],"jpcoar:affiliationName":[{"@value":"NTT Device Technology Labs, NTT Corporation,Atsugi-shi,Kanagawa,Japan"}]},{"@id":"https://cir.nii.ac.jp/crid/1380016869817524997","@type":"Researcher","foaf:name":[{"@value":"G. Itami"}],"jpcoar:affiliationName":[{"@value":"NTT Device Technology Labs, NTT Corporation,Atsugi-shi,Kanagawa,Japan"}]},{"@id":"https://cir.nii.ac.jp/crid/1380016869817524998","@type":"Researcher","foaf:name":[{"@value":"T. Fujimura"}],"jpcoar:affiliationName":[{"@value":"Tokyo Institute of Technology,Meguro-ku, Tokyo,Japan"}]},{"@id":"https://cir.nii.ac.jp/crid/1380016869817524999","@type":"Researcher","foaf:name":[{"@value":"I. Abdo"}],"jpcoar:affiliationName":[{"@value":"Tokyo Institute of Technology,Meguro-ku, Tokyo,Japan"}]},{"@id":"https://cir.nii.ac.jp/crid/1380016869817524994","@type":"Researcher","foaf:name":[{"@value":"K. Okada"}],"jpcoar:affiliationName":[{"@value":"Tokyo Institute of Technology,Meguro-ku, Tokyo,Japan"}]},{"@id":"https://cir.nii.ac.jp/crid/1380016869817524992","@type":"Researcher","foaf:name":[{"@value":"H. Nosaka"}],"jpcoar:affiliationName":[{"@value":"NTT Device Technology Labs, NTT Corporation,Atsugi-shi,Kanagawa,Japan"}]}],"publication":{"prism:publicationName":[{"@value":"2019 IEEE International Electron Devices Meeting (IEDM)"}],"dc:publisher":[{"@value":"IEEE"}],"prism:publicationDate":"2019-12","prism:startingPage":"9.2.1","prism:endingPage":"9.2.4"},"reviewed":"false","dc:rights":["https://doi.org/10.15223/policy-029","https://doi.org/10.15223/policy-037"],"url":[{"@id":"http://xplorestaging.ieee.org/ielx7/8971803/8993428/08993540.pdf?arnumber=8993540"}],"createdAt":"2020-02-14","modifiedAt":"2025-08-21","relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1390578780305763968","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Evaluation of Transmission Characteristics of 120-GHz-Band Close-Proximity Wireless Links Using Split-Ring-Resonator Absorber Integrated Planar Slot Antenna"}]},{"@id":"https://cir.nii.ac.jp/crid/1390582484891491200","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"10-Gbit/s Data Transmission Using 120-GHz-Band Contactless Communication with SRR Integrated Glass Substrate"}]},{"@id":"https://cir.nii.ac.jp/crid/1390858906233107968","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Ultra-high-speed 300-GHz InP IC Technology for Beyond 5G"}]}],"dataSourceIdentifier":[{"@type":"CROSSREF","@value":"10.1109/iedm19573.2019.8993540"},{"@type":"OPENAIRE","@value":"doi_dedup___::05289a6a56c94fb20704e031d6e00454"},{"@type":"CROSSREF","@value":"10.1587/transele.2022ecp5065_references_DOI_Jnq8hNDH5ItvAfUVSn5xkqmcYGg"},{"@type":"CROSSREF","@value":"10.53829/ntr202105ra1_references_DOI_Jnq8hNDH5ItvAfUVSn5xkqmcYGg"},{"@type":"CROSSREF","@value":"10.1587/transele.2023ecp5024_references_DOI_Jnq8hNDH5ItvAfUVSn5xkqmcYGg"}]}