著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
Masanori Nagase and Tokio Takahashi and Mitsuaki Shimizu,Enhancement of nonvolatile memory characteristics caused by GaN/AlN resonant tunneling diodes,Semiconductor Science and Technology,0268-1242,IOP Publishing,2023-03-14,38,4,045011,https://cir.nii.ac.jp/crid/1360017280651783808,https://doi.org/10.1088/1361-6641/acbaf8