著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
Masahito Mori and Shoki Irie and Yugo Osano and Koji Eriguchi and Kouichi Ono,Model analysis of the feature profile evolution during Si etching in HBr-containing plasmas,"Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films",0734-2101,American Vacuum Society,2021-05-14,39,4,,https://cir.nii.ac.jp/crid/1360017289541029376,https://doi.org/10.1116/6.0000970